Patents by Inventor Berni W. Landau

Berni W. Landau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reduced leakage trench isolation
    Patent number: 6410359
    Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
    Type: Grant
    Filed: March 26, 2001
    Date of Patent: June 25, 2002
    Assignee: Intel Corporation
    Inventors: Kevin M. Connolly, Jung S. Kang, Berni W. Landau, James E. Breisch, Akira Kakizawa, Joseph W. Parks, Jr., Mark A. Beiley, Zong-Fu Li, Cory E. Weber, Shaofeng Yu
  • Reduced leakage trench isolation
    Patent number: 6403394
    Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: June 11, 2002
    Assignee: Intel Corporation
    Inventors: Kevin M. Connolly, Jung S. Kang, Berni W. Landau, James E. Breisch, Akira Kakizawa
  • Photodiode structure
    Patent number: 6372607
    Abstract: A circuit that includes an isolation boundary formed to a depth in a substrate defining an active area of the substrate, a primary junction formed in the active area to a primary junction depth in the substrate to collect electron/hole pairs, and a secondary junction formed in the active area adjacent to the isolation boundary to a secondary junction depth at least equal to the isolation boundary depth.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: April 16, 2002
    Assignee: Intel Corporation
    Inventor: Berni W. Landau
  • Reduced leakage trench isolation
    Publication number: 20010019850
    Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
    Type: Application
    Filed: March 29, 2001
    Publication date: September 6, 2001
    Inventors: Kevin M. Connolly, Jung S. Kang, Berni W. Landau, James E. Breisch, Akira Kakizawa
  • Reduced leakage trench isolation
    Publication number: 20010019851
    Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
    Type: Application
    Filed: March 26, 2001
    Publication date: September 6, 2001
    Inventors: Kevin M. Connolly, Jung S. Kang, Berni W. Landau, James E. Breisch, Akira Kakizawa, Joseph W. Parks, Mark A. Beiley, Zong-Fu Li, Cory E. Weber, Shaofeng Yu
  • Reduced leakage trench isolation
    Patent number: 6259145
    Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
    Type: Grant
    Filed: June 17, 1998
    Date of Patent: July 10, 2001
    Assignee: Intel Corporation
    Inventors: Kevin M. Connolly, Jung S. Kang, Berni W. Landau, James E. Breisch, Akira Kakizawa
  • Reduced leakage trench isolation
    Patent number: 6215165
    Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.
    Type: Grant
    Filed: May 12, 1999
    Date of Patent: April 10, 2001
    Assignee: Intel Corporation
    Inventors: Kevin M. Connolly, Jung S. Kang, Berni W. Landau, James E. Breisch, Akira Kakizawa, Joseph W. Parks, Jr., Mark A. Beiley, Zong-Fu Li, Cory E. Weber, Shaofeng Yu
  • Embedded dielectric film for quantum efficiency enhancement in a CMOS imaging device
    Patent number: 6130422
    Abstract: The present invention is an image sensor and its fabricating method. The image sensor comprises a photodiode and a dielectric structure. The photodiode is responsive to an amount of incident light from a light source. The dielectric structure is on top of the photodiode and is placed between the photodiode and an inter-level dielectric (ILD) oxide layer. The dielectric structure contains a dielectric material. The ILD oxide layer is made of an oxide material and has an ILD oxide thickness.
    Type: Grant
    Filed: June 29, 1998
    Date of Patent: October 10, 2000
    Assignee: Intel Corporation
    Inventors: Edward J. Bawolek, Robert C. Sundahl, Berni W. Landau, Stephen B. Gospe, Jack S. Uppal, Jung S. Kang
  • Shallow trench isolation technique
    Patent number: 5719085
    Abstract: A method of forming a trench isolation region. The method of the present invention comprises the steps of forming an opening in a semiconductor substrate, oxidizing the opening a first time, and then etching the oxidized opening with a wet etchant comprising HF. The opening is then oxidized a second time.
    Type: Grant
    Filed: September 29, 1995
    Date of Patent: February 17, 1998
    Assignee: Intel Corporation
    Inventors: Peter K. Moon, Berni W. Landau, David T. Krick