Patents by Inventor Bernie Roque

Bernie Roque has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a nitrided silicon-oxide gate dielectric
    Patent number: 8709887
    Abstract: A method of fabricating a gate dielectric layer. The method includes: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
    Type: Grant
    Filed: July 16, 2007
    Date of Patent: April 29, 2014
    Assignee: International Business Machines Corporation
    Inventors: Jay S. Burnham, James S. Nakos, James J. Quinlivan, Bernie Roque, Jr., Steven M. Shank, Beth A. Ward
  • METHOD FOR FABRICATING A NITRIDED SILICON-OXIDE GATE DIELECTRIC
    Publication number: 20080014692
    Abstract: A method of fabricating a gate dielectric layer. The method includes: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
    Type: Application
    Filed: July 16, 2007
    Publication date: January 17, 2008
    Inventors: Jay Burnham, James Nakos, James Quinlivan, Bernie Roque, Steven Shank, Beth Ward
  • Method for fabricating a nitrided silicon-oxide gate dielectric
    Patent number: 7291568
    Abstract: A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
    Type: Grant
    Filed: August 26, 2003
    Date of Patent: November 6, 2007
    Assignee: International Business Machines Corporation
    Inventors: Jay S. Burnham, James S. Nakos, James J. Quinlivan, Bernie A. Roque, Jr., Steven M. Shank, Beth A. Ward
  • METHOD FOR FABRICATING A NITRIDED SILICON-OXIDE GATE DIELECTRIC
    Publication number: 20050048705
    Abstract: A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.
    Type: Application
    Filed: August 26, 2003
    Publication date: March 3, 2005
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Jay Burnham, James Nakos, James Quinlivan, Bernie Roque, Steven Shank, Beth Ward