Patents by Inventor Bert R. Riemenschnschneider

Bert R. Riemenschnschneider has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrically erasable programmable read only memory cell including trench capacitor
    Patent number: 4713677
    Abstract: An EEPROM cell is described which includes a trench formed in the field oxide adjacent to the EEPROM cell. Both the control gate and the floating gate of the cell are formed over this trench. By forming both gates above the trench, the capacitive coupling between the gates is increased. Thus a EEPROM cell constructed in accordance with the teachings of this invention may be constructed using a smaller surface area of the integrated circuit or may utilize a smaller programming voltage to charge and discharge the floating gate.
    Type: Grant
    Filed: October 2, 1986
    Date of Patent: December 15, 1987
    Assignee: Texas Instruments Incorporated
    Inventors: Howard L. Tigelaar, Bert R. Riemenschnschneider, James L. Paterson