Patents by Inventor Bert Verstraeten
Bert Verstraeten has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11506566Abstract: Methods for processing data from a metrology process and for obtaining calibration data are disclosed. In one arrangement, measurement data is obtained from a metrology process. The metrology process includes illuminating a target on a substrate with measurement radiation and detecting radiation redirected by the target. The measurement data includes at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method further includes analyzing the at least a component of the detected pupil representation to determine either or both of a position property and a focus property of a radiation spot of the measurement radiation relative to the target.Type: GrantFiled: December 10, 2018Date of Patent: November 22, 2022Assignee: ASML Netherlands B.V.Inventors: Mariya Vyacheslavivna Medvedyeva, Maria Isabel De La Fuente Valentin, Satej Subhash Khedekar, Bert Verstraeten, Bastiaan Onne Fagginer Auer
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Publication number: 20220326625Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.Type: ApplicationFiled: June 9, 2022Publication date: October 13, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Bert VERSTRAETEN, Hugo Augustinus Joseph CRAMER, Thomas THEEUWES
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Patent number: 11385551Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.Type: GrantFiled: August 16, 2017Date of Patent: July 12, 2022Assignee: ASML Netherlands B.V.Inventors: Bert Verstraeten, Hugo Augustinus Joseph Cramer, Thomas Theeuwes
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Publication number: 20210302845Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.Type: ApplicationFiled: August 16, 2017Publication date: September 30, 2021Inventors: Bert VERSTRAETEN, HUGO JOSEPH CRAMER AUGUSTINUS, THOMAS THEEUWES
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Patent number: 11054754Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424) A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1?) and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.Type: GrantFiled: May 28, 2018Date of Patent: July 6, 2021Assignee: ASML Netherlands B.V.Inventors: Frank Staals, Anton Bernhard Van Oosten, Yasri Yudhistira, Carlo Cornelis Maria Luijten, Bert Verstraeten, Jan-Willem Gemmink
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Patent number: 10871367Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.Type: GrantFiled: May 26, 2020Date of Patent: December 22, 2020Assignee: ASML Netherlands B.V.Inventors: Alok Verma, Hugo Augustinus Joseph Cramer, Thomas Theeuwes, Anagnostis Tsiatmas, Bert Verstraeten
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Publication number: 20200284578Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.Type: ApplicationFiled: May 26, 2020Publication date: September 10, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Alok VERMA, Hugo Augustinus Joseph CRAMER, Thomas THEEUWES, Anagnostis TSIATMAS, Bert VERSTRAETEN
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Patent number: 10747122Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method includes measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target has a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation includes at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.Type: GrantFiled: October 31, 2017Date of Patent: August 18, 2020Assignee: ASML Netherlands B.V.Inventors: Anagnostis Tsiatmas, Alok Verma, Bert Verstraeten
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Patent number: 10677589Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.Type: GrantFiled: August 20, 2018Date of Patent: June 9, 2020Assignee: ASML Netherlands B.V.Inventors: Alok Verma, Hugo Augustinus Joseph Cramer, Thomas Theeuwes, Anagnostis Tsiatmas, Bert Verstraeten
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Publication number: 20200142324Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424) A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1?) and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.Type: ApplicationFiled: May 28, 2018Publication date: May 7, 2020Applicant: ASML Netherlands B.V.Inventors: Frank STAALS, Anton Bernhard VAN OOSTEN, Yasri YUDHISTIRA, Carlo Cornelis Maria LUIJTEN, Bert VERSTRAETEN, Jan-Willem GEMMINK
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Patent number: 10571363Abstract: Methods of determining an optimal focus height are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a target are obtained. Each application of the metrology process includes illuminating the target with a radiation spot and detecting radiation redirected by the target. The applications of the metrology process include applications at different nominal focus heights. The measurement data includes, for each application of the metrology process, at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal focus height for the metrology process using the obtained measurement data.Type: GrantFiled: January 22, 2019Date of Patent: February 25, 2020Assignee: ASML Netherlands B.V.Inventors: Mariya Vyacheslavivna Medvedyeva, Anagnostis Tsiatmas, Hugo Augustinus Joseph Cramer, Martinus Hubertus Maria Van Weert, Bastiaan Onne Fagginger Auer, Xiaoxin Shang, Johan Maria Van Boxmeer, Bert Verstraeten
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Publication number: 20190354024Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method includes measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target has a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation includes at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.Type: ApplicationFiled: October 31, 2017Publication date: November 21, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Anagnostis TSIATMAS, Alok VERMA, Bert VERSTRAETEN
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Publication number: 20190242782Abstract: Methods of determining an optimal focus height are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a target are obtained. Each application of the metrology process includes illuminating the target with a radiation spot and detecting radiation redirected by the target. The applications of the metrology process include applications at different nominal focus heights. The measurement data includes, for each application of the metrology process, at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal focus height for the metrology process using the obtained measurement data.Type: ApplicationFiled: January 22, 2019Publication date: August 8, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Mariya Vyacheslavivna MEDVEDYEVA, Anagnostis TSIATMAS, Hugo Augustinus Joseph CRAMER, Martinus Hubertus Maria VAN WEERT, Bastiaan Onne FAGGINGER AUER, Xiaoxin SHANG, Johan Maria VAN BOXMEER, Bert VERSTRAETEN
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Publication number: 20190204180Abstract: Methods for processing data from a metrology process and for obtaining calibration data are disclosed. In one arrangement, measurement data is obtained from a metrology process. The metrology process includes illuminating a target on a substrate with measurement radiation and detecting radiation redirected by the target. The measurement data includes at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method further includes analyzing the at least a component of the detected pupil representation to determine either or both of a position property and a focus property of a radiation spot of the measurement radiation relative to the target.Type: ApplicationFiled: December 10, 2018Publication date: July 4, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Mariya Vyacheslavivna MEDVEDYEVA, Maria Isabel DE LA FUENTE VALENTIN, Satej Subhash KHEDEKAR, Bert VERSTRAETEN, Bastiaan Onne FAGGINGER AUER
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Publication number: 20190063911Abstract: A substrate having a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features. The plurality of features include first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.Type: ApplicationFiled: August 20, 2018Publication date: February 28, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Alok Verma, Hugo Augustinus Joseph Cramer, Thomas Theeuwes, Anagnostis Tsiatmas, Bert Verstraeten