Abstract: Described is a composition comprising as primary surfactant an ionic compound comprising one or more fluoroalkyl groups and as secondary surfactant at least one non-ionic compound comprising one or more polyalkyloxy and/or polyalkylenoxy groups, for cleaning or rinsing a product, preferably a product used in the semiconductor industry, and a respective use of said composition. Further described is a method of making a cleaned or rinsed product, preferably a product used in the semiconductor industry, comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below, comprising the step of cleaning or rinsing said product with the composition of the invention.

Abstract: An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03-)nXn+ (I), R—P032?(Xn+)3-n (II); (RO—S03-)nXn+ (III), RO—P032?(Xn+)3-n, (IV), and [(RO)2P02?]nXn+ (V); wherein the n=1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.

Abstract: An aqueous alkaline composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03)nXn+(I), R—P032-(Xn+)3-n(II); (RO—S03-)nXn+(III), RO—P032-(Xn+)3-n (IV), and [(RO)2P02-]nXn+(V); wherein the n=1 or 2; X is hydrogen, ammonium, or alkaline or alkaline-earth metal; the variable R1 is an olefmically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; and (C) a buffer system, wherein at least one component other than water is volatile; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.

Abstract: An aqueous alkaline etching and cleaning composition for treating the surface of silicon substrates, the said composition comprising: (A) a quaternary ammonium hydroxide; and (B) a component selected from the group consisting of water-soluble acids and their water-soluble salts of the general formulas (I) to (V): (R1—S03-)nXn+ (I), R—P032?(Xn+)3-n (II); (RO—S03-)nXn+ (III), RO—P032?(Xn+)3-n, (IV), and [(RO)2P02-]nXn+ (V); wherein the n=1 or 2; X is hydrogen or alkaline or alkaline-earth metal; the variable R1 is an olefinically unsaturated aliphatic or cycloaliphatic moiety and R is R1 or an alkylaryl moiety; the use of the composition for treating silicon substrates, a method for treating the surface of silicon substrates, and methods for manufacturing devices generating electricity upon the exposure to electromagnetic radiation.

Abstract: Use of mixtures comprising (A) at least one solvent with a flashpoint of at least 80° C., (B) at least one corrosion inhibitor which is liquid at room temperature, (C) at least one base selected from organic amines, ammonium hydroxides, and alkali metal hydroxides, (D) water, and (E) optionally one or more polyurethanes, for removing polyurethane from metal surfaces.

Abstract: A method for cleaning structured surfaces of semiconductor components to remove photoresist and etching residues after the etching of the surface, comprising: a) treatment of the surface with an acidic aqueous solution comprising one or more acids and one or more oxidizing agents, b) removal of the photoresist and c) washing with demineralized water in the stated sequence.

Abstract: A method for cleaning structured surfaces of semiconductor components to remove photoresist and etching residues after the etching of the surface, comprising: a) removal of the photoresist, b) treatment of the surface with an acidic aqueous solution comprising one or more acids and one or more oxidizing agents, c) treatment of the surface with an alkaline aqueous solution and d) washing of the surface with demineralized water, the steps a), b) and c) being effected before step d).