Abstract: The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

Abstract: The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

Abstract: A system and method for treating a substrate in a reaction chamber. A transfer chamber is arranged between a first lock and a second lock, wherein the second lock is provided between the transfer chamber and the reaction chamber. A substrate is transferred into the transfer chamber through the first lock, and the first lock is closed. In a next step, the transfer chamber is flooded with the same gas as in the reaction chamber and the pressure and temperature of the gaseous atmosphere in the transfer chamber is controlled to be the same as in the reaction chamber. Then, the second lock is opened and the substrate is transferred from the transfer chamber into the reaction chamber to treat the substrate. A computer program product for carrying out the above method.

Abstract: The invention relates to a target for coating a substrate with an alloy by means of cathode sputtering, said alloy having at least one first material and one second material as alloy components. The surface of the target has at least one first section made of the first material and one second section made of the second material. The two sections adjoin each other and form a common boundary line. The invention further relates to a device and a method for coating a substrate with an alloy by means of cathode sputtering using the target according to the invention.

Abstract: A system and method for treating a substrate in a reaction chamber. A transfer chamber is arranged between a first lock and a second lock, wherein the second lock is provided between the transfer chamber and the reaction chamber. A substrate is transferred into the transfer chamber through the first lock, and the first lock is closed. In a next step, the transfer chamber is flooded with the same gas as in the reaction chamber and the pressure and temperature of the gaseous atmosphere in the transfer chamber is controlled to be the same as in the reaction chamber. Then, the second lock is opened and the substrate is transferred from the transfer chamber into the reaction chamber to treat the substrate. A computer program product for carrying out the above method.

Abstract: The invention relates to a target for coating a substrate with an alloy by means of cathode sputtering, said alloy having at least one first material and one second material as alloy components. The surface of the target has at least one first section made of the first material and one second section made of the second material. The two sections adjoin each other and form a common boundary line. The invention further relates to a device and a method for coating a substrate with an alloy by means of cathode sputtering using the target according to the invention.

Abstract: The invention relates to a method for heating/cooling and coating a substrate in a vacuum chamber, comprising the following steps: (1) arranging the lower face of the substrate on a substrate holder, (2) lifting the substrate by a predefined distance relative to the substrate holder, and (3) heating the lifted substrate via its upper face by means of a heating device such as a radiant heating device, (4) coating the hot substrate, for example by moving it in or through a coating zone, (5) cooling the substrate by lowering it onto the chuck and (6) optionally further coating the cold substrate. The method according to the invention further enables process sequences to be executed, wherein various defined temperatures can be set on the substrate during each step, and optionally one or more coating processes can be executed immediately subsequently at said substrate temperature.

Abstract: An apparatus for coating a substrate has a vacuum chamber designed to receive the substrate and at least one sputtering target to be ablated during operation of the apparatus by particle bombardment. At least one window is arranged in the wall of the vacuum chamber. A device for determining the wear of the sputtering target, by optically measuring the distance between at least one predefinable point outside the vacuum chamber and at least one predefinable point on the surface of the sputtering target, and including an evaluation device correcting for any parallax offset and/or a geometric distortion.

Abstract: The invention relates to a sputtering cathode (1) for coating a substrate (6), which comprises a device (5) for generating an external magnetic field with substantially parallel magnetic field lines (8) substantially in the plane of the substrate. The invention further relates to a device and a method for coating a substrate with several layers, whereby several sputtering cathodes are disposed in a circle with their target effective areas pointing radially outward.

Abstract: The invention relates to a sputtering cathode (1) for coating a substrate (6), which comprises a device (5) for generating an external magnetic field with substantially parallel magnetic field lines (8) substantially in the plane of the substrate. The invention further relates to a device and a method for coating a substrate with several layers, whereby several sputtering cathodes are disposed in a circle with their target effective areas pointing radially outward.

Abstract: An evacuable chamber serving as a cathode contains a rotatable magnet system and is connected to a high frequency power supply for sputtering a target. The chamber is electrically isolated from an evacuable housing containing the substrate to be coated, the chamber being covered by a cup-like shield fixed to the housing to define an interior space. A pipe for evacuating the chamber includes first and second sections separated by a gap and connected by an electrically insulating collar in which parallel metal grids are installed in the gap and respectively connected to the power source and to ground in order to prevent the formation of secondary plasma.

Abstract: Individual target segments (A-F), are mounted on a mounting plate by means of locating studs inserted into mounting holes of elongate or circular cross sections in correspondence with the change in length caused by the thermal expansion of the target segments. The segments are retained by screws received in tapped bones in the studs, which are welded to the target backplates. The individual segments (A-F) each consist of a target backplate and a target bonded to the backplate. The perimeter of each backplate over laps the perimeter of each target segment, this overlap amounting to 0.05-0.2 mm when molybdenum or titanium is used for the target backplate and an indium-tin alloy is used for the sputter target.

Abstract: The target (5) of a sputter cathode 3 is permanently bonded to a metallic backing plate (14, 15) with a coefficient of thermal expansion similar to that of the target (5). This backing plate (14, 15) is held removably on the electrode (4), for example by means of spring clips (16, 17).

Abstract: The inside of a coating chamber (2) has a sputtering cathode (3) bearing a magnet set (6) and having a pot-shaped electrode (4) and a target (5). The electrode (4) is closed on the side facing away from the target (5) by a cover (11) to form a pressure equalizing chamber (12). The latter has a vacuum connection (13) for establishing a vacuum acting against the vacuum in the coating chamber (2).