Abstract: A power combiner system includes four microwave solid-state power amplifiers, which are connected in an H configuration by a magic tee device.

Abstract: A solidstate amplifier includes at least one interconnection, between a microstrip and a linearized impedance matching waveguide ridge, the interconnection being provided with a clamping device.

Abstract: The invention relates to a radio communication terminal (10) comprising: an antenna (12) having an impedance; an impedance-measuring sensor (14) for measuring the impedance of the antenne (12) in order to produce a measured impedance; an amplifier (18); a filter (20) connected to the antenna (12) and the amplifier (18), the filter (20) having a variable impedance; and a body (22) for controlling the impedance of the filter (20), the body being used to control the impedance of the filter (20) according to the measured impedance.

Abstract: A method is provided for selectively, dynamically and adaptively jamming the third-party radio communications that are external to a radio communication network to be protected, which optimizes the effectiveness of the jamming of P predefined areas or positions in a network of transmitters, and which uses closed-loop control to limit fratricidal effects on certain platforms having telecommunication transmitters/receivers to be preserved.

Abstract: The present invention relates to a protection circuit for MOS-technology field-effect transistors. The circuit comprises at least one MOSFET protected by a module for blocking said MOSFET, the module being placed between the gate of the MOSFET and an electrical conductor, the module comprising switched connection means having at least two states: a first state which connects the gate of the MOSFET to the conductor, which is maintained at an electrical potential suitable for blocking the MOSFET, this first state being activated in the presence of an alarm signal; and a second state which disconnects the gate of the MOSFET, this second state being activated in the absence of the alarm signal. The invention applies notably to the protection of the power MOSFETs included in the amplification stages of electronic systems.

Abstract: The present invention relates to a protection circuit for MOS-technology field-effect transistors. The circuit comprises at least one MOSFET protected by a module for blocking said MOSFET, the module being placed between the gate of the MOSFET and an electrical conductor, the module comprising switched connection means having at least two states: a first state which connects the gate of the MOSFET to the conductor, which is maintained at an electrical potential suitable for blocking the MOSFET, this first state being activated in the presence of an alarm signal; and a second state which disconnects the gate of the MOSFET, this second state being activated in the absence of the alarm signal. The invention applies notably to the protection of the power MOSFETs included in the amplification stages of electronic systems.

Abstract: The invention concerns H-bridge type power amplifiers and their blocking means.The memory effect of the capacitive impedance of control inputs of each of the two blocking transistors-in the H-bridge is used to block and unblock the amplifier synchronously with the amplifier input signal: a first switch and a semi-conductor element are placed in parallel with each other, in series with each of these control inputs, such that the blocking of the blocking transistor necessitates the opening of the first switch under the control of the blocking signal, and is dependent on the sign of the charge carried by said capacitive impedance; a second switch controlled by the half periods of the input signal only enables the first switch to close and therefore unblocking of the considered blocking transistor for half periods that are not amplified by this blocking transistor.