Patents by Inventor Bertrand L. Marchand

Bertrand L. Marchand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for modeling IC substrate noise utilizing improved doping profile access key
    Patent number: 6920417
    Abstract: A method for modeling a substrate, which includes obtaining vertically discretized doping profiles in the substrate to facilitate modeling. The method includes employing substrate region names and substrate cross-section names as access keys to permit accessing of the vertically discretized doping profiles. The use of the combination of region names and substrate cross-section names as unique access keys simplifies access to doping profile information for modeling purposes and yields valuable information pertaining to the presence of p-type to n-type material transitions. The information pertaining to transitions may be employed to improve substrate modeling accuracy through the inclusion of junction capacitances with the modeling process.
    Type: Grant
    Filed: July 12, 2001
    Date of Patent: July 19, 2005
    Assignee: Cadence Design Systems, Inc.
    Inventors: Jérôme D. Lescot, Bertrand L. Marchand
  • Apparatus for modeling IC substrate noise utilizing improved doping profile access key
    Publication number: 20020006714
    Abstract: A method for modeling a substrate, which includes obtaining vertically discretized doping profiles in the substrate to facilitate modeling. The method includes employing substrate region names and substrate cross-section names as access keys to permit accessing of the vertically discretized doping profiles. The use of the combination of region names and substrate cross-section names as unique access keys simplifies access to doping profile information for modeling purposes and yields valuable information pertaining to the presence of p-type to n-type material transitions. The information pertaining to transitions may be employed to improve substrate modeling accuracy through the inclusion of junction capacitances with the modeling process.
    Type: Application
    Filed: July 12, 2001
    Publication date: January 17, 2002
    Inventors: Jerome D. Lescot, Bertrand L. Marchand
  • Method of modeling IC substrate noises utilizing improved doping profile access
    Patent number: 6291324
    Abstract: A method for modeling a substrate, which includes obtaining vertically discretized doping profiles in the substrate to facilitate modeling. The method includes employing substrate region names and substrate cross-section names as access keys to permit accessing of the vertically discretized doping profiles. The use of the combination of region names and substrate cross-section names as unique access keys simplifies access to doping profile information for modeling purposes and yields valuable information pertaining to the presence of p-type to n-type material transitions. The information pertaining to transitions may be employed to improve substrate modeling accuracy through the inclusion of junction capacitances with the modeling process.
    Type: Grant
    Filed: March 27, 2000
    Date of Patent: September 18, 2001
    Assignee: Simplex Solutions, Inc.
    Inventors: Jérôme D. Lescot, Bertrand L. Marchand