Abstract: A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.

Abstract: An integrated circuit includes a substrate and a resistor. The resistor is formed from at least two access wells of a first conductivity type and a deep buried layer electrically connecting the wells. The deep buried layer is at least partly covered by a region of opposite conductivity.

Abstract: A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.

Abstract: A bipolar transistor with very high dynamic performance, usable in an integrated circuit. The bipolar transistor has a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.

Abstract: An integrated circuit includes a substrate and a resistor. The resistor is formed from at least two access wells of a first conductivity type and a deep buried layer electrically connecting the wells. The deep buried layer is at least partly covered by a region of opposite conductivity.

Abstract: A method for manufacturing a bipolar transistor, comprising the steps of: growing on the substrate a first semiconductor; depositing an encapsulation layer etchable with respect to the first semiconductor, forming a sacrificial block at the location of the base-emitter junction; exposing the first semiconductor around spacers formed around said block; forming a second semiconductor, then a third semiconductor etchable with respect to the second semiconductor layer, the encapsulation layer, and the spacers, the sum of the thicknesses of the second semiconductor and the sacrificial layer being substantially equal to the sum of the thicknesses of the encapsulation layer and of the sacrificial block; removing the block and the encapsulation layer; depositing a fourth semiconductor; removing the third semiconductor; and etching an insulating layer to maintain it on the emitter walls and between said emitter and the second semiconductor.

Abstract: A novel bipolar transistor with very high dynamic performances, usable in an integrated circuit. This bipolar transistor comprises a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.

Abstract: A method for forming a heterojunction bipolar transistor including the steps of: forming in a semiconductor substrate a collector area of a first doping type; growing by epitaxy above a portion of the collector area a silicon/germanium layer of a second doping type forming a base area; forming above the silicon/germanium layer a sacrificial emitter formed of a material selectively etchable with respect to the silicon/germanium layer and with respect to the layers and consecutively-formed insulating spacers; forming first insulating spacers on the sides of the sacrificial emitter; growing by epitaxy a silicon layer above the exposed portions of the silicon/germanium layer; forming second insulating spacers adjacent to the first spacers and laid on the silicon layer; covering the entire structure with an insulating layer; partially removing the insulating layer above the sacrificial emitter and removing the sacrificial emitter; filling the space previously taken up by the sacrificial emitter with a semiconducto

Abstract: A method for manufacturing a bipolar transistor, comprising the steps of: growing on the substrate a first semiconductor; depositing an encapsulation layer etchable with respect to the first semiconductor, forming a sacrificial block at the location of the base-emitter junction; exposing the first semiconductor around spacers formed around said block; forming a second semiconductor, then a third semiconductor etchable with respect to the second semiconductor layer, the encapsulation layer, and the spacers, the sum of the thicknesses of the second semiconductor and the sacrificial layer being substantially equal to the sum of the thicknesses of the encapsulation layer and of the sacrificial block; removing the block and the encapsulation layer; depositing a fourth semiconductor; removing the third semiconductor; and etching an insulating layer to maintain it on the emitter walls and between said emitter and the second semiconductor.