Patents by Inventor Beth A. Baumert

Beth A. Baumert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7164566
    Abstract: Methods and apparatus are provided an electrostatic discharge (ESD) protection device having a first terminal and a second terminal. The ESD protection device comprises a vertical transistor having a collector coupled to the first terminal, a base, and an emitter coupled to the second terminal. A zener diode has a first terminal coupled to the first terminal of the ESD protection device and a second terminal coupled to the base of the vertical transistor. Subsurface current paths are provided to redistribute current from a surface of the vertical transistor in an ESD event. The method comprises generating an ionization current when a zener diode breaks down during an ESD event. The ionization current density from a surface zener diode region is reduced. The ionization current enables a transistor to dissipate the ESD event.
    Type: Grant
    Filed: March 19, 2004
    Date of Patent: January 16, 2007
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Hongzhong Xu, Beth A. Baumert, Richard T. Ida