Patents by Inventor Beth A. Muratore

Beth A. Muratore has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Volatile barium precursor and use of precursor in OMCVD process
    Patent number: 5319118
    Abstract: Novel volatile barium complexes are disclosed which are very stable and evaporate cleanly at elevated temperatures. Such complexes are highly suited for use as a barium source in OMCVD processes.
    Type: Grant
    Filed: October 17, 1991
    Date of Patent: June 7, 1994
    Assignee: Air Products and Chemicals, Inc.
    Inventors: John A. T. Norman, Beth A. Muratore, Paul N. Dyer
  • Volatile liquid precursors for the chemical vapor deposition of copper
    Patent number: 5144049
    Abstract: Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. There organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is H, C .sub.1 -C.sub.8 alkyl, or Si(R.sup.6).sub.3, each R.sup.5 is independently H or C.sub.1 -C.sub.8 alkyl and each R .sup.6 is independently phenyl or C.sub.1 -C.sub.8 alkyl. A process for depositing copper films using these organometalic copper complexes is also provided.
    Type: Grant
    Filed: October 23, 1991
    Date of Patent: September 1, 1992
    Assignee: Air Products and Chemicals, Inc.
    Inventors: John A. T. Norman, Beth A. Muratore
  • Volatile liquid precursors for the chemical vapor deposition of copper
    Patent number: 5085731
    Abstract: Volatile liquid organometallic copper complexes are provided which are capable of selectively depositing a copper film onto metallic or other electrically conducting portions of a substrate surface under CVD conditions. These organometallic copper complexes are represented by the structural formula: ##STR1## wherein R.sup.1 and R.sup.3 are each independently C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.2 is H, F or C.sub.1 -C.sub.8 perfluoroalkyl, R.sup.4 is H, C.sub.1 -C.sub.8 alkyl, or Si(R.sup.6).sub.3, each R.sup.5 is independently H or C.sub.1 --C.sub.8 alkyl and each R.sup.6 is independently phenyl or C.sub.1 -C.sub.8 alkyl. A process for depositing copper films using these organometallic copper complexes is also provided.
    Type: Grant
    Filed: February 4, 1991
    Date of Patent: February 4, 1992
    Assignee: Air Products and Chemicals, Inc.
    Inventors: John A. T. Norman, Beth A. Muratore