Patents by Inventor Betty J. Tseng

Betty J. Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composite semiconductor devices and method for manufacture thereof
    Patent number: 6444491
    Abstract: An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.
    Type: Grant
    Filed: April 11, 2000
    Date of Patent: September 3, 2002
    Assignee: Agere Systems Optoelectronics Guardian Corp.
    Inventors: Lucian Arthur D'Asaro, Keith Wayne Goossen, Sanghee Park Hui, Betty J. Tseng, James Albert Walker
  • Process for manufacture of composite semiconductor devices
    Patent number: 6048751
    Abstract: An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.
    Type: Grant
    Filed: December 13, 1995
    Date of Patent: April 11, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Lucian Arthur D'Asaro, Keith Wayne Goossen, Sanghee Park Hui, Betty J. Tseng, James Albert Walker