Abstract: The present invention provides an interconnect for use in an integrated circuit, a method for manufacturing the interconnect, and a method for manufacturing an integrated circuit including the interconnect. The interconnect (100), among other elements, includes a surface conductive lead (160) located in an opening formed within a protective overcoat (110), and a barrier layer (140) located between the protective overcoat (110) and the surface conductive lead (160), a portion of the barrier layer (140) forming a skirt (145) that extends outside a footprint of the surface conductive lead (160).

Abstract: In one embodiment of the present invention, a contact structure of a semiconductor device within an integrated circuit includes an active region, the active region having been defined using a mask provided on a substrate. The contact structure further includes an isolation region adjacent the active region and including a field oxide: the field oxide having been grown by exposure of the substrate to a thermal process and an oxygen-containing gas; a film having been formed on a top surface of the mask during exposure to the thermal process and oxygen-containing gas; a dry etching process having been performed to substantially remove the film from the top surface of the mask and to remove a top portion of the field oxide in the isolation region; and a wet etching process having been performed to substantially remove any portion of the mask remaining after the dry etching process.

Abstract: In one embodiment of the present invention, a contact structure of a semiconductor device within an integrated circuit includes an active region, the active region having been defined using a mask provided on a substrate. The contact structure further includes an isolation region adjacent the active region and including a field oxide: the field oxide having been grown by exposure of the substrate to a thermal process and an oxygen-containing gas; a film having been formed on a top surface of the mask during exposure to the thermal process and oxygen-containing gas; a dry etching process having been performed to substantially remove the film from the top surface of the mask and to remove a top portion of the field oxide in the isolation region; and a wet etching process having been performed to substantially remove any portion of the mask remaining after the dry etching process.