Patents by Inventor Bevan Vo

Bevan Vo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734166
    Abstract: A composite structure for an electric energy storage device is envisioned. The structure is made of a metal substrate and a metal oxide layer disposed over a majority of the metal substrate with the metal oxide layer being comprised of a first and second metals. Carbon nanotubes are disposed on the metal oxide layer. In an embodiment the first metal and the second metal are each selected from a group consisting of: iron, nickel, aluminum, cobalt, copper, chromium, and gold.
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: August 4, 2020
    Assignee: ZapGo Ltd
    Inventors: Cattien Nguyen, You Li, Hoang Nguyen Ly, Darrell Niemann, Bevan Vo, Phillip Kraus
  • Patent number: 10546698
    Abstract: A composite electrode structure and methods of making and using thereof are disclosed. The structure has a metal substrate with a metal oxide layer. The average thickness of the metal oxide layer is less than 150 nm, and comprises at least a first metal and a second metal, wherein the first metal and the second metal are different elements. A plurality of carbon nanotubes is disposed on a first surface of the metal oxide layer. At least a portion of the carbon nanotubes are disposed such that one end of the carbon nanotube is positioned at least 5 nm below the surface of the metal oxide layer.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: January 28, 2020
    Assignee: ZapGo Ltd
    Inventors: Cattien V. Nguyen, You Li, Hoang Nguyen Ly, Darrell L. Niemann, Bevan Vo, Philip A. Kraus
  • Publication number: 20190304710
    Abstract: A composite structure for an electric energy storage device is envisioned. The structure is made of a metal substrate and a metal oxide layer disposed over a majority of the metal substrate with the metal oxide layer being comprised of a first and second metals. Carbon nanotubes are disposed on the metal oxide layer. In an embodiment the first metal and the second metal are each selected from a group consisting of: iron, nickel, aluminum, cobalt, copper, chromium, and gold.
    Type: Application
    Filed: March 13, 2014
    Publication date: October 3, 2019
    Inventors: Cattien Nguyen, You Li, Hoang Nguyen Ly, Darrell Niemann, Bevan Vo, Phillip Kraus
  • Publication number: 20180218847
    Abstract: A composite structure for an electric energy storage device is envisioned. The structure is made of a metal substrate and a metal oxide layer disposed over a majority of the metal substrate with the metal oxide layer being comprised of a first and second metals. Carbon nanotubes are disposed on the metal oxide layer. In an embodiment the first metal and the second metal are each selected from a group consisting of: iron, nickel, aluminum, cobalt, copper, chromium, and gold.
    Type: Application
    Filed: March 13, 2014
    Publication date: August 2, 2018
    Inventors: Cattien Nguyen, You Li, Hoang Nguyen Ly, Darrell Niemann, Bevan Vo, Phillip Kraus
  • Publication number: 20140349216
    Abstract: A composite electrode structure and methods of making and using thereof are disclosed. The structure has a metal substrate with a metal oxide layer. The average thickness of the metal oxide layer is less than 150 nm, and comprises at least a first metal and a second metal, wherein the first metal and the second metal are different elements. A plurality of carbon nanotubes is disposed on a first surface of the metal oxide layer. At least a portion of the carbon nanotubes are disposed such that one end of the carbon nanotube is positioned at least 5 nm below the surface of the metal oxide layer.
    Type: Application
    Filed: August 13, 2014
    Publication date: November 27, 2014
    Applicant: ULTORA, INC.
    Inventors: Cattien V. NGUYEN, You LI, Hoang Nguyen LY, Darrell L. NIEMANN, Bevan VO, Philip A. Kraus
  • Patent number: 6461435
    Abstract: A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.
    Type: Grant
    Filed: June 22, 2000
    Date of Patent: October 8, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Karl A. Littau, Bevan Vo, Salvador P. Umotoy, Son N. Trinh, Chien-Teh Kao, Ken Kaung Lai, Bo Zheng, Ping Jian, Siqing Lu, Anzhong Chang