Patents by Inventor Bharadwaja S.N. SHROWTHI

Bharadwaja S.N. SHROWTHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrical interconnection structure, electronic apparatus and manufacturing methods for the same
    Patent number: 11884536
    Abstract: Provided are an electrical interconnection structure, an electronic apparatus and manufacturing methods therefor, which can provide a reliable electrical interconnection structure between the MEMS apparatus and an external circuit while sealing and encapsulating the MEMS device. The electrical interconnection structure includes: a bonding metal; a first dielectric layer and a second dielectric layer. The first dielectric layer includes a first through hole penetrating the first dielectric layer and exposing the bonding metal. The first through hole is filled with a first conductive material electrically connected to the bonding metal. The second dielectric layer includes a second through hole. An orthographic projection of second conductive material in the second through hole covers an orthographic projection of first conductive material in the first through hole onto the plane of the base.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: January 30, 2024
    Assignee: AAC TECHNOLOGIES PTE. LTD.
    Inventors: Bharadwaja S.N. Shrowthi, Jeffrey Crosswell Maling
  • ELECTRICAL INTERCONNECTION STRUCTURE, ELECTRONIC APPARATUS AND MANUFACTURING METHODS FOR THE SAME
    Publication number: 20220127138
    Abstract: Provided are an electrical interconnection structure, an electronic apparatus and manufacturing methods therefor, which can provide a reliable electrical interconnection structure between the MEMS apparatus and an external circuit while sealing and encapsulating the MEMS device. The electrical interconnection structure includes: a bonding metal; a first dielectric layer and a second dielectric layer. The first dielectric layer includes a first through hole penetrating the first dielectric layer and exposing the bonding metal. The first through hole is filled with a first conductive material electrically connected to the bonding metal. The second dielectric layer includes a second through hole. An orthographic projection of second conductive material in the second through hole covers an orthographic projection of first conductive material in the first through hole onto the plane of the base.
    Type: Application
    Filed: February 26, 2021
    Publication date: April 28, 2022
    Inventors: Bharadwaja S.N. SHROWTHI, Jeffrey Crosswell Maling