Abstract: Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.

Abstract: Host systems for resuming operation of a virtual compute instance may be identified that support features enabled for the virtual compute instance. Virtual compute instance features may be enabled at runtime prior to a virtual compute instance being stopped. When a virtual compute instance is started again, these features may be used to identify a host system that supports at least these features so that when the virtual compute instance resumes operation on the identified host, the features can be enabled.

Abstract: One or more systems and methods for wireless equipment deployment are provided herein. Imagery of locations depicting structures within a list of structures is analyzed to identify features of the structures within the locations. Ranks may be calculated for the structures based upon structure scores and installation scores calculated from the features. In response to a rank for a structure exceeding a threshold, wireless equipment deployment of a communication device may be triggered so that the communication device is controlled to exchange communication signals with devices proximate the structure.

Abstract: Techniques for batch mode execution for calls to remote services are described. A method of batch mode execution for calls to remote services may include generating, by a query service of a provider network, a query plan to optimize a query for batch processing of data, the query plan including at least a function reference to a function provided by at least one service of the provider network, executing the query plan to invoke the function associated with the function reference, wherein a batch function generates a request including a batch of service calls to be processed by the at least one service, sends the request including the batch of service calls to the at least one service, and obtains a plurality of machine learning responses from the at least one service, and generating a query response based on the plurality of responses.

Abstract: The various implementations described herein include methods and devices for using a messaging system to analyze and distribute data analytics. In one aspect, a method includes displaying a user interface for a communications application, the user interface including a dashboard display area for a group of users. In response to a user input, display of the dashboard display area is replaced with a view corresponding to a data analysis application. The data analysis application is separate from the communications application, and the view corresponding to the data analysis application provides access to reports generated, using credentials of a user of the communications application, without user input to execute or open the data analysis application. A second user input is received requesting to share a report with the selected group of users, and in response, the report is published to the dashboard display area for the selected group of users.

Abstract: A method includes receiving data indicative of properties of a substrate support from one or more sensors of a removable sensor assembly disposed proximate to the substrate support. The method further includes providing data based on the data indicative of properties of a substrate support to a physics-based model of the substrate support. The method further includes receiving predicted performance data of the substrate support from the physics-based model.

Abstract: A method includes receiving first data indicative of a range of values of a quality parameter of a type of manufacturing chamber component. Each value in the range of values meets one or more threshold criteria. The method further includes providing the first data to a physics-based model of a manufacturing chamber. The method further includes receiving, from the physics-based model, second data indicating a relationship between values of the quality parameter and predicted conditions in the manufacturing chamber. The method further includes determining, based on the relationship between values of the quality parameter and the predicted conditions, whether a new manufacturing chamber component of the manufacturing chamber component type is to be installed in the manufacturing chamber.

Abstract: The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

Abstract: Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

Abstract: One or more systems and methods for wireless equipment deployment are provided herein. Imagery of locations depicting structures within a list of structures is analyzed to identify features of the structures within the locations. Ranks may be calculated for the structures based upon structure scores and installation scores calculated from the features. In response to a rank for a structure exceeding a threshold, wireless equipment deployment of a communication device may be triggered so that the communication device is controlled to exchange communication signals with devices proximate the structure.

Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.

Abstract: The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

Abstract: Automated radio frequency safety and compliance for 5G network systems. In an embodiment, a database comprises, for each of a plurality of sites, data representing relative locations of transmitter(s), including at least one 5G antenna, that emit radio frequency (RF) radiation at the site. For at least one of the sites, a power density caused by the transmitter(s) is calculated for one or more areas of the site. In addition, a maximum permissible exposure (MPE) map of the site is generated. The MPE map may comprise a graphical representation of each transmitter, and graphically distinguish any area of the site for which the calculated power density exceeds at least one limit.

Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.

Abstract: A safety device for an elevator system or an escalator system includes a safety circuit having a plurality of safety circuit elements, wherein the safety circuit is adapted for stopping an operation of the elevator system or escalator system when at least one of the safety circuit elements of the safety circuit opens, a manual service switch for opening at least one of the safety circuit elements of the safety circuit, and a light device adapted to be illuminated in a first illumination color while all the safety circuit elements are closed and to be no longer illuminated in the first illumination color when at least one of the safety circuit elements of the safety circuit is open.

Abstract: Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.

Abstract: Implementations of the present disclosure provide methods for treating a processing chamber. In one implementation, the method includes purging a 300 mm substrate processing chamber, without the presence of a substrate, by flowing a purging gas into the substrate processing chamber at a flow rate of about 0.14 sccm/mm2 to about 0.33 sccm/mm2 and a chamber pressure of about 1 Torr to about 30 Torr, with a throttle valve of a vacuum pump system of the substrate processing chamber in a fully opened position, wherein the purging gas is chemically reactive with deposition residue on exposed surfaces of the substrate processing chamber.

Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.

Abstract: Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.

Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.