Patents by Inventor Bhaskar Bhuyan

Bhaskar Bhuyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Molecular layer deposition method and system
    Patent number: 11545354
    Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: January 3, 2023
    Assignees: Applied Materials, Inc., National University of Singapore
    Inventors: Bhaskar Bhuyan, Zeqing Shen, Bo Qi, Abhijit Basu Mallick, Xinke Wang, Mark Saly
  • MOLECULAR LAYER DEPOSITION METHOD AND SYSTEM
    Publication number: 20220028686
    Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.
    Type: Application
    Filed: July 22, 2020
    Publication date: January 27, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Bhaskar Bhuyan, Zeqing Shen, Bo Qi, Abhijit Basu Mallick, Xinke Wang, Mark Saly