Abstract: Exemplary processing methods may include performing a silicon-containing atomic layer deposition (ALD) process. The silicon-containing ALD process may deposit a silicon-containing material in a feature defined in a substrate disposed in a processing region of a semiconductor processing chamber. The methods may include providing an oxygen-containing precursor to a processing region. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may at least partially reduce a presence of a seam in the silicon-containing material.

Abstract: The present disclosure generally provides methods. The methods include exposing a substrate in a processing chamber to a deposition precursor to form a first film. The first film having a first dielectric constant, a first leakage current, a first breakdown voltage, and a first hardness. The first film is exposed to a reactive precursor to form a second film. The second film having a second dielectric constant, a second leakage current, a second breakdown voltage, and a second hardness, wherein the reactive precursor comprises an oxygenated precursor. The second film is exposed to a UV light source to form a third film. The third film having a third dielectric constant, a third leakage current, a third breakdown voltage, and a third hardness.

Abstract: Exemplary processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. A layer of a first silicon-containing material defining one or more features may be disposed on the substrate. The methods may include contacting the substrate with the one or more deposition precursors. The contacting may deposit a liner material on the first silicon-containing material. The methods may include performing an atomic layer deposition (ALD) process. The ALD process may deposit a silicon-and-oxygen-containing material in the one or more features.

Abstract: A method of processing a substrate with a vertical feature and a plurality of lateral features extending from the vertical feature is provided. The method includes exposing surfaces of the vertical feature and the plurality of lateral features to an anisotropic plasma generated from an inhibiting gas mixture to form an inhibition gradient on surfaces of the vertical feature and the plurality of lateral features, and depositing a gapfill structure in the vertical feature and lateral features. In an embodiment, the inhibition gradient provides for varying the growth rate of the gapfill structure in the vertical feature and the plurality of lateral features.

Abstract: Exemplary methods of semiconductor processing may include i) performing an inhibition operation on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may define one or more features characterized by an aspect ratio of greater than or about 30:1. The methods may include ii) performing a silicon-containing atomic layer deposition (ALD) process. The silicon-containing ALD process may deposit a silicon-containing material in the one or more features. The methods may include iii) etching a portion of the silicon-containing material from an upper portion of the one or more features. The methods may include iv) repeating operations i) through iii) for a plurality of cycles.

Abstract: Exemplary processing methods may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed in the processing region. The substrate may define a feature. The methods may include contacting the substrate with the carbon-containing precursor. The contacting may form a carbon-containing material on the substrate that partially lines the feature. The methods may include performing a silicon-containing atomic layer deposition (ALD) process. The silicon-containing ALD process may deposit a silicon-containing material at a bottom portion of the feature. The methods may include repeating the operations to fill the feature with silicon-containing material.

Abstract: The present disclosure provides methods. The methods include forming a precursor film by delivering a precursor to a substrate in a processing chamber having a high aspect ratio opening defining a gap between two or more features of the substrate. An expansion film is formed by treating the precursor film with a plasma. An oxygen-containing compound is delivered to the expansion film to form an oxide gap fill material having a volume that is about 1.1 to about 2.0 greater than an expansion film.

Abstract: Disclosed herewith are a precursor, a gas mixture, and a method for depositing a dielectric film in a processing chamber. A method includes disposing a substrate on a susceptor disposed within a processing chamber; controlling a pressure level and a temperature of the processing chamber; delivering an RF power into the processing chamber; providing a precursor-containing gas mixture into the processing chamber, and applying a post-deposition process to the substrate after the dielectric film is formed on the substrate. The precursor-containing gas mixture includes a precursor and an inert gas selected from the group consisting of argon, nitrogen, and helium. The precursor includes a carbosilane having a Si—C—Si structure in a backbone of the precursor.

Abstract: Exemplary methods of semiconductor processing may include iteratively repeating a deposition cycle several times on a substrate disposed within a processing region of a semiconductor processing chamber. Each deposition cycle may include depositing a silicon-containing material on the substrate and exposing the silicon-containing material to a first oxygen plasma to convert the silicon-containing material to a silicon-and-oxygen-containing material. After the iterative repeating of the deposition cycle, the method may include performing a densification operation by exposing the silicon-and-oxygen-containing material to a second oxygen plasma to produce a densified silicon-and-oxygen-containing material where the quality of the densified silicon-and-oxygen-containing material is greater than the silicon-and-oxygen-containing material. The method may further include iteratively repeating the iteratively repeated deposition cycles and the densification operation several times.

Abstract: Exemplary methods of semiconductor processing may include methods for nonconformally building up silicon-and-oxygen-containing material where the top of the feature preferentially fills at a slower rate as compared to the bottom of the feature. Such methods may include iterative nonconformal etching operations and/or iterative nonconformal inhibition operations. For example, after building up a layer comprising silicon-and-oxygen-containing material, the layer may be nonconformally etched before building up another layer comprising silicon-and-oxygen-containing material. In another example, in the building up of the layer, an inhibitor may be introduced preferentially at and near the top of the features to provide nonconformal buildup of the silicon-and-oxygen-containing material.