Abstract: A method for preventing molten material breach in a crystal growth apparatus includes providing a chamber of the crystal growth apparatus which is coated with a ceramic material. The chamber can be coated on an interior surface to prevent damage to the chamber itself, which is made of steel, and to prevent steam explosions in the water-cooled chamber. Ceramic blanket layers also can be provided over the coated interior surface of the chamber. As a result, it is possible to produce high quality crystalline products while minimizing the hazards and costs in the event of a spill of molten material.

Abstract: Systems and methods are provided to promote uniform thermal environment to feedstock material (e.g., silicon) in a crucible of a crystal growth apparatus are provided herein. More specifically, a heating system may be arranged in the crystal growth apparatus so as to include at least a first and second heating element which are configured to distribute heat axisymmetrically to the feedstock material and the second heating element that is configured to distribute heat symmetrically to the feedstock material to thereby provide uniform heat distribution to the feedstock material in the crucible to allow for increased consistency in crystal ingot quality.

Abstract: Systems and methods are provided to promote uniform thermal environment to feedstock material (e.g., silicon) in a crucible of a crystal growth apparatus are provided herein. More specifically, a heating system may be arranged in the crystal growth apparatus so as to include at least a first and second heating element which are configured to distribute heat axisymmetrically to the feedstock material and the second heating element that is configured to distribute heat symmetrically to the feedstock material to thereby provide uniform heat distribution to the feedstock material in the crucible to allow for increased consistency in crystal ingot quality.

Abstract: A method for preventing molten material breach in a crystal growth apparatus includes providing a chamber of the crystal growth apparatus which is coated with a ceramic material. The chamber can be coated on an interior surface to prevent damage to the chamber itself, which is made of steel, and to prevent steam explosions in the water-cooled chamber. Ceramic blanket layers also can be provided over the coated interior surface of the chamber. As a result, it is possible to produce high quality crystalline products while minimizing the hazards and costs in the event of a spill of molten material.

Abstract: Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containing a single seed crystal (20) and feedstock material (90), where the seed crystal (20) is at least partially melted, and the feedstock material (90) is completely melted in the crucible (50), which is followed by a growth and solidification process. Growth of monocrystalline materials such as silicon ingots is achieved by directional solidification, in which heat extraction during growth phases is achieved using insulation (14) that is movable relative to a crucible (50) containing feedstock (90). A heat exchanger (200) also is provided to control heat extraction from the crucible (50) during the growth and solidification process to achieve monocrystalline growth.