Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor and a method of fabricating the same arc disclosed. In a complementary metal-oxide semiconductor (CMOS) image sensor including a photodiode receiving irradiated light and generating electric charges, a plurality of conductive circuits each formed in different layers, a plurality of interlayer dielectrics insulating the conductive circuits, and a micro-lens formed of the interlayer dielectrics and focusing the irradiated light to the photodiode, the CMOS image sensor includes a lens formed in a dome shape on any one of the interlayer dielectrics and re-focusing the light focused by the micro-lens to the photodiode.

Abstract: A method for fabricating a CMOS image sensor in which an electron shower is performed for microlenses whose surfaces are charged to a positive potential, so as to neutralize the positive potential, thereby improving performance and yield of the image sensor.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor and a method of fabricating the same are disclosed. In a complementary metal-oxide semiconductor (CMOS) image sensor including a photodiode receiving irradiated light and generating electric charges, a plurality of conductive circuits each formed in different layers, a plurality of interlayer dielectrics insulating the conductive circuits, and a micro-lens formed of the interlayer dielectrics and focusing the irradiated light to the photodiode, the CMOS image sensor includes a lens formed in a dome shape on any one of the interlayer dielectrics and re-focusing the light focused by the micro-lens to the photodiode.