Patents by Inventor Bi-Shiou Chiou

Bi-Shiou Chiou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20090242900
    Abstract: The invention discloses a memory device and method thereof. The memory device comprises a substrate, an insulator layer, a first conducting layer, a CaCu3Ti4O12 resistor layer and a second conducting layer. The insulator layer is formed over the substrate. The first conducting layer is formed over the insulator layer. The CaCu3Ti4O12 resistor layer is formed over the first conducting layer. The second conducting layer is formed over the CaCu3Ti4O12 resistor layer. In manufacturing, firstly, a substrate is provided. Then, a resistor layer is formed on the substrate. Next, a first conducting layer is formed on the resistor layer. Afterward, a CaCu3Ti4O12 resistor layer is formed on the first conducting layer by utilizing sol-gel method. Finally, a second conducting layer is formed on the CaCu3Ti4O12 resistor layer. The invention not only satisfies a requirement of low driving voltage in electronic product but also increases reliability and compatibility even cost is diminished.
    Type: Application
    Filed: August 25, 2008
    Publication date: October 1, 2009
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Bi Shiou CHIOU, Li Chun CHANG, Chia Cheng HO, Dai Ying LEE, Yu Shu SHEN
  • Microsensor with ferroelectric material and method for fabricating the same
    Patent number: 7413912
    Abstract: A microsensor fabricated with a ferroelectric material and a fabrication method therefor are provided. The microsensor includes a support, an insulating layer on the support, a first electrode on the insulating layer, a ferroelectric layer having at least a metal on the insulating layer and the first electrode, and at least a second electrode on the ferroelectric layer.
    Type: Grant
    Filed: May 11, 2005
    Date of Patent: August 19, 2008
    Assignee: Instrument Technology Research Center, National Applied Research Laboratories
    Inventors: Jyh-Shin Chen, Der-Chi Shye, Meng-Wei Kuo, Ming-Hua Shiao, Jiann-Shium Kao, Huang-Chung Cheng, Bi-Shiou Chiou
  • Microsensor with ferroelectric material and method for fabricating the same
    Publication number: 20060258040
    Abstract: A microsensor fabricated with a ferroelectric material and a fabrication method therefor are provided. The microsensor includes a support, an insulating layer on the support, a first electrode on the insulating layer, a ferroelectric layer having at least a metal on the insulating layer and the first electrode, and at least a second electrode on the ferroelectric layer.
    Type: Application
    Filed: May 11, 2005
    Publication date: November 16, 2006
    Inventors: Jyh-Shin Chen, Der-Chi Shye, Meng-Wei Kuo, Ming-Hua Shiao, Jiann-Shium Kao, Huang-Chung Cheng, Bi-Shiou Chiou