Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array. The control logic allocates power to one or more prioritized processing threads, of a plurality of processing threads that access the memory array, based on a value of a priority ring counter. The control logic starts a timer in response to detecting allocation of the power to a non-prioritized processing thread of the plurality of processing threads. While the timer is running, the control logic increments the priority ring counter before each power management cycle and prioritizes allocation of the power to the one or more prioritized processing threads located within a subset of the plurality of processing threads corresponding to a value of the priority ring counter.

Abstract: A method includes selecting a particular ready/busy pin (R/B #) among a plurality of R/B # pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B # pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.

Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array. The control logic allocates power to one or more prioritized processing threads, of a plurality of processing threads that access the memory array, based on a value of a priority ring counter. The control logic starts a timer in response to detecting allocation of the power to a non-prioritized processing thread of the plurality of processing threads. While the timer is running, the control logic increments the priority ring counter before each power management cycle and prioritizes allocation of the power to the one or more prioritized processing threads located within a subset of the plurality of processing threads corresponding to a value of the priority ring counter.

Abstract: Control logic on a memory die of a multi-die memory sub-system receives, from a memory sub-system controller, a data burst command indicating an upcoming data burst event and determines an expected current utilization in the memory sub-system during the data burst event. The control logic further determines whether the expected current utilization in the memory sub-system during the data burst event satisfies a threshold criterion and responsive to determining that the expected current utilization in the memory sub-system during the data burst event does not satisfy the threshold criterion, pauses one or more operations being executed by the control logic on the memory die until the expected current utilization in the memory sub-system during the data burst event satisfies the threshold criterion.

Abstract: A method includes selecting a particular ready/busy pin (R/B#) among a plurality of R/B# pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B# pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.

Abstract: A memory device includes memory dice, each memory die including: a memory array; a memory to store a data structure; and control logic that includes: multiple processing threads to execute memory access operations on the memory array concurrently; a priority ring counter, the data structure to store an association between a value of the priority ring counter and a subset of the multiple processing threads; a threads manager to increment the value of the priority ring counter before a power management cycle and to identify one or more prioritized processing threads corresponding to the subset of the multiple processing threads; and a peak power manager coupled with the threads manager and to prioritize allocation of power to the one or more prioritized processing threads during the power management cycle.

Abstract: A memory device includes a plurality of memory dies. Each memory die of the plurality of memory dies includes a memory die and control logic, operatively coupled with the memory die, to perform operations including receiving, during a current auxiliary data communication cycle, a token to enable auxiliary data communication, in response to receiving the token, determining whether to communicate auxiliary data via an auxiliary data channel to at least one other memory die of a plurality of memory dies, and in response to determining to communicate the auxiliary data via the auxiliary data channel to the at least one other memory die, causing the auxiliary data to be communicated to the at least one other memory die.

Abstract: A method includes selecting a particular ready/busy pin (R/B #) among a plurality of R/B # pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B # pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.

Abstract: A method includes receiving a request to perform a memory access operation, wherein the memory access operation includes a set of sub-operations, selecting a current quantization data structure from a plurality of current quantization data structures, wherein each current quantization data structure of the plurality of current quantization data structures maintains, for each sub-operation of the set of sub-operations, a respective current quantization value reflecting an amount of current that is consumed by the respective sub-operation based on a set of peak power management (PPM) operation parameters, and causing the memory access operation to be performed using PPM based on the current quantization data structure.

Abstract: A memory device includes a plurality of memory dies, each memory die of the plurality of memory dies comprising a memory array and control logic. The control logic comprises a plurality of processing threads to execute memory access operations on the memory array concurrently, a thread selection component to identify one or more processing threads of the plurality of processing threads for a power management cycle of the associated memory die and a power management component to determine an amount of power associated with the one or more processing threads and request the amount of power during the power management cycle.

Abstract: A memory device includes memory dice, each memory die including: a memory array; a memory to store a data structure; and control logic that includes: multiple processing threads to execute memory access operations on the memory array concurrently; a priority ring counter, the data structure to store an association between a value of the priority ring counter and a subset of the multiple processing threads; a threads manager to increment the value of the priority ring counter before a power management cycle and to identify one or more prioritized processing threads corresponding to the subset of the multiple processing threads; and a peak power manager coupled with the threads manager and to prioritize allocation of power to the one or more prioritized processing threads during the power management cycle.

Abstract: A method includes selecting a particular ready/busy pin (R/B#) among a plurality of R/B# pins that are associated with respective memory dice among a plurality of memory dice of a memory device. The method further includes receiving, by at least one memory dice among the plurality of memory dice, signaling indicative of performance of a memory access while the particular R/B# pin is set to low, and, initiating an internal clocking signal subsequent to receipt of the signaling indicative of performance of the memory access, wherein the internal clocking signal is associated with timing of operations performed by the plurality of memory dice.

Abstract: A memory device includes a plurality of memory dies, each memory die of the plurality of memory dies comprising a memory array and control logic. The control logic comprises a plurality of processing threads to execute memory access operations on the memory array concurrently, a thread selection component to identify one or more processing threads of the plurality of processing threads for a power management cycle of the associated memory die and a power management component to determine an amount of power associated with the one or more processing threads and request the amount of power during the power management cycle.