Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: The present invention provides integrated systems and methods for carrying out manufacturing steps relating to etching, photoresist stripping and optionally, particle removal. More specifically, the present invention provides integrated systems and methods which may be utilized to etch oxide with subsequent removal of photoresist using BOE solutions that are desirably blended on-line. Advantageously, systems and methods embodying features of the present invention include a single process chamber so that cycle time and individual step processing time are reduced, further resulting in increased productivity of the systems and methods.

Abstract: Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates the use of a surface tension reducing agent during at least partial drying; and the method may be performed using automated rinsing equipment; also described are automated rinsing apparatuses useful with the method.

Abstract: The present invention provides methods for selectively stripping polysilicon-containing films from oxide surfaces using an etching composition including a fluoride ion source and an oxidant. The etching composition exhibits a high degree of selectivity between polysilicon and oxide, such that the underlying oxide surface or film layer acts as a stop layer, thereby protecting the underlying substrate from the etching composition. Furthermore, the etching composition is effective at substantially at ambient temperature, thereby avoiding the potential safety concerns that may arise when chemicals are heated in manufacturing situations.

Abstract: The present invention provides methods for selectively stripping tantalum-containing films from oxide surfaces using an etching composition including a fluoride ion source and an acidic oxidant. The etching composition exhibits a high degree of selectivity between tantalum-containing films and oxide films, such that the underlying oxide surface or film layer acts as a stop layer, thereby protecting the underlying substrate from the etching composition. Furthermore, the etching composition is effective at substantially at ambient temperature, thereby avoiding the potential safety concerns that may arise when chemicals are heated in manufacturing situations. Finally, in certain preferred embodiments, the etching composition may further comprise a non-acidic oxidant. In these embodiments of the invention the etching composition is useful to reclaim wafers having at least a portion of the wafer substrate exposed, eg., wafers bearing film stacks comprising TEOS.