Abstract: Embodiments of the present disclosure relate to multimedia processing method, apparatus, device and medium, wherein the method includes: presenting a first multimedia interface comprising first content; receiving an interface switching request of a user in the first multimedia interface; and switching from the first multimedia interface currently presented to a second multimedia interface, and presenting second content in the second multimedia interface, wherein the first content comprises the second content and other content associated with the second content, and the second content comprises a target audio and a target subtitle corresponding to the target audio.

Abstract: The invention provides a method for evaluating deep-buried tunnel blasting parameters, and belongs to the technical field of mine engineering. The method comprises: setting multiple diverse blasting schemes; selecting a plurality of test sections with the same geological characteristics, the number of the test sections corresponding to the number of the blasting schemes; blasting the test sections using the blasting schemes, and obtaining diversified monitoring data of each test section; and comparing the diversified monitoring data to select the optimal blasting schemes for the test sections. According to the method for evaluating the deep-buried tunnel blasting parameters, by implementing different blasting schemes in test sections with the same geological characteristics, diversified monitoring data of the test sections are obtained and compared to select the optimal blasting schemes for the test sections, so as to ensure the safety and quality of blasting excavation of deep-buried tunnels.

Abstract: A massager includes a flexible outer housing, a driving housing, and an inclined expansion fastener. An upper end of the driving housing is cut into a plurality of elastic sheets. A cavity is defined at the upper end of the driving housing, and the inclined expansion fastener is partially disposed in the cavity. When the inclined expansion fastener moves downward, the inclined expansion fastener opens the plurality of the elastic sheets, so that a diameter of the upper end of the driving housing is increased; and when the inclined expansion fastener moves upward, the inclined expansion fastener moves out of the cavity at the upper end of the driving housing, the plurality of the elastic sheets rebound and reset, and the diameter of the upper end of the driving housing is restored.

Abstract: A regulator includes a valve body and a control element movable between a closed position, in which the control element engages a valve seat, and an open position, in which the control element is spaced away from the valve seat. A stem is operatively coupled to the control element and is axially aligned with a longitudinal axis of the valve body. An indicator assembly is at least partially disposed in the valve body and is operatively coupled to the stem. The indicator assembly includes a rod operatively coupled to the stem and an indicator operatively coupled to the rod. The indicator is arranged to display a position of the control element. The rod of the indicator assembly is movable by the stem between a first position when the control element is in the closed position, and a second position when the control element is in the open position.

Abstract: The present disclosure provides a massaging device, which includes a first housing and a driving assembly received in the first housing, the driving assembly includes a tilting shaft and a rotating element connected with the tilting shaft, a length of the tilting shaft has a range of 10˜50 mm, when the tilting shaft rotates, the tilting shaft is configured to drive the first housing to swing by the rotating element. The massaging device of the present disclosure has advantages of good massaging effect and long service life.

Abstract: A method for manufacturing a semiconductor module is provided. The method includes: providing a substrate, wherein the substrate comprises a front side and at least one semiconductor element formed on the front side; forming a shielding structure on the at least one semiconductor element; forming a piezoelectric layer on the shielding structure.

Abstract: A tire mold cleaning device includes a protective cover, a cleaning mechanism, a loading mechanism and a limiting mechanism. The cleaning mechanism is disposed in the protective cover; the loading mechanism includes linear sliding rails and a loading platform, the linear sliding rails are mounted at a bottom end of an interior of the protective cover, and the loading platform is connected to movable ends of the linear sliding rails. The limiting mechanism includes a base plate and limiting rods, and the base plate is disposed on a bottom end of the interior of the protective cover. A tire mold is cleaned through cooperation of the linear sliding rails and the loading platform, the limiting rods can limit a moving range of the tire mold, thereby preventing the tire mold from sliding under the action of inertia.

Abstract: A semiconductor module and a method for manufacturing the same are provided. The semiconductor module includes a substrate comprising a front side and at least one semiconductor device formed on the front side, a shielding structure formed on the at least one semiconductor device, and a piezoelectric layer formed on the shielding structure.

Abstract: A fluid regulator includes an actuator assembly disposed in a valve body. A sleeve includes a cylindrical wall, a first plate, and a second plate. Each of the first plate and the second plate is disposed in a cavity of the sleeve. A stem extends through the sleeve and is axially aligned with a longitudinal axis of the body, and includes a passage extending partially through the stem. The actuator assembly includes first and second pistons. First, second, third, and fourth chambers are separately disposed between the sleeve, the first or second plate, or the first or second piston. The first and third chambers are in fluid communication, and the second and fourth chambers are in fluid communication via the passage of the stem. The actuator assembly actuates a control element in response to a fluid pressure receivable in the first, second, third, and/or fourth chambers.

Abstract: A method for fabricating a semiconductor device is provided, including following steps. Providing a staked layer of a semiconductor layer, a buried oxide layer and a silicon layer. Forming a silicon-based device layer comprising the silicon layer on the buried oxide layer. Forming a first interconnection layer over the silicon-based device layer. Forming a semiconductor-based device layer comprising the semiconductor layer on the buried oxide layer. Forming a second interconnection layer over the semiconductor-based device layer.

Abstract: A player profile management system collects player data from various systems and generates and manages player profiles. A snapshot pipeline of the player profile management system generates a snapshot player profile associated with a player. The player profile management system receives, after generating the snapshot player profile associated with the player, player data associated with the player. An update pipeline of the player profile management system generates, based on the snapshot player profile and the player data associated with the player, an update player profile associated with the player.

Abstract: A player profile management system collects player data from various systems and generates and manages player profiles. A snapshot pipeline of the player profile management system generates a snapshot player profile associated with a player. The player profile management system receives, after generating the snapshot player profile associated with the player, player data associated with the player. An update pipeline of the player profile management system generates, based on the snapshot player profile and the player data associated with the player, an update player profile associated with the player.

Abstract: A semiconductor device is provided, including a buried oxide layer, having a first side and a second side. A silicon-based device layer is disposed on the first side of the buried oxide layer. The silicon-based device layer includes a first interconnection structure. A semiconductor-based device layer is disposed on the second side of the buried oxide layer. The semiconductor-based device layer includes a second interconnection structure.

Abstract: A method of manufacturing a memory structure including following steps is provided. Two gate stack structures are formed on a substrate. A conductive material layer is conformally formed on the two gate stack structures. The conductive material layer includes two protrusions located on the two gate stack structures. Hard mask spacers are formed on two sides of each of the two protrusions. A first etching process is performed to remove a portion of the conductive material layer by using the hard mask spacers as a mask. A second etching process is performed to completely remove the hard mask spacers. Then, a third etching process is performed on the conductive material layer to form a first conductive spacer and a second conductive spacer located on one side and the other side of the two gate stack structures and to form a conductive layer located between the two gate stack structures.

Abstract: A player profile management system collects player data from various systems and generates and manages player profiles. A snapshot pipeline of the player profile management system generates a snapshot player profile associated with a player. The player profile management system receives, after generating the snapshot player profile associated with the player, player data associated with the player. An update pipeline of the player profile management system generates, based on the snapshot player profile and the player data associated with the player, an update player profile associated with the player.

Abstract: A computer processing device transitions among a plurality of power management states and at least one power management sub-state. From a first state, it is determined whether an entry condition for a third state is satisfied. If the entry condition for the third state is satisfied, the third state is entered. If the entry condition for the third state is not satisfied, it is determined whether an entry condition for the first sub-state is satisfied. If the entry condition for the first sub-state is determined to be satisfied, the first sub-state is entered, a first sub-state residency timer is started, and after expiry of the first sub-state residency timer, the first sub-state is exited, the first state is re-entered, and it is re-determined whether the entry condition for the third state is satisfied.

Abstract: A structure of a semiconductor device is provided, including a circuit substrate. A first metal bulk layer is disposed on the circuit substrate. A buffer layer is disposed on the first metal bulk layer. An absorbing layer is disposed on the buffer layer. A first electrode layer is disposed on the absorbing layer. A plurality of piezoelectric material units are disposed on the first electrode layer. A protection layer is conformally disposed on the piezoelectric material units. A second metal bulk layer is disposed over the piezoelectric material units, and including a first part and a second part. The first part penetrating through the protection layer is disposed on the piezoelectric material units, serving as a second electrode layer. The second part is at a same level of the first part, and at least electrically connecting to the first electrode layer.

Abstract: A semiconductor device is provided. The semiconductor device includes a device substrate, having a device structure layer and a buried dielectric layer, wherein the buried dielectric layer is disposed on a semiconductor layer of the device structure layer and the device substrate comprises a device structure. A metal layer is disposed on the buried dielectric layer and surrounded by a first inter-layer dielectric (ILD) layer. A region of the metal layer has a plurality of openings. The buried dielectric layer has an air gap under and exposing the region of the metal layer with the openings, wherein the air gap is located above the device structure in the device substrate. A second ILD layer is disposed on the metal layer and sealing the air gap at the openings of the metal layer.

Abstract: A tunnel defect detection and management system based on a vibration signal of a moving train. This system identifies the defects in a subway tunnel structure and soil behind a wall through the acquisition, transmission and analysis of an on-board acceleration signal. A signal acquisition sensor is mounted on the moving train. A signal acquisition module and a signal transmission system are mounted in the train to preprocess and compress the signal. A data processing and analysis server performs data analysis to quickly identify the defects of the tunnel and the auxiliary structure thereof, and determine a defect location and type. A tunnel management platform releases real-time detection information and health status of the tunnel, alarms for the defects, and releases the defect data to relevant personnel to take measures.

Abstract: A semiconductor device is provided. The semiconductor device includes a device substrate, having a device structure layer and a buried dielectric layer, wherein the buried dielectric layer is disposed on a semiconductor layer of the device structure layer. A metal layer is disposed on the buried dielectric layer and surrounded by a first inter-layer dielectric (ILD) layer. A region of the metal layer has a plurality of openings. The buried dielectric layer has an air gap under and exposing the region of the metal layer with the openings. A second ILD layer is disposed on the metal layer and sealing the air gap at the openings of the metal layer.