Patents by Inventor Biau-Dar Chen
Biau-Dar Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11742459Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 ?m.Type: GrantFiled: August 2, 2022Date of Patent: August 29, 2023Assignee: EPISTAR CORPORATIONInventors: Chien-Hua Chou, Tai-Chun Wang, Chih-Tsung Su, Biau-Dar Chen
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Publication number: 20220376136Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 ?m.Type: ApplicationFiled: August 2, 2022Publication date: November 24, 2022Inventors: Chien-Hua CHOU, Tai-Chun WANG, Chih-Tsung SU, Biau-Dar CHEN
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Patent number: 11430916Abstract: A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.Type: GrantFiled: November 2, 2020Date of Patent: August 30, 2022Assignee: EPISTAR CORPORATIONInventors: Chien-Hua Chou, Tai-Chun Wang, Chih-Tsung Su, Biau-Dar Chen
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Publication number: 20210074886Abstract: A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.Type: ApplicationFiled: November 2, 2020Publication date: March 11, 2021Inventors: Chien-Hua CHOU, Tai-Chun WANG, Chih-Tsung SU, Biau-Dar CHEN
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Patent number: 10825956Abstract: A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.Type: GrantFiled: October 31, 2019Date of Patent: November 3, 2020Assignee: EPISTAR CORPORATIONInventors: Chien-Hua Chou, Tai-Chun Wang, Chih-Tsung Su, Biau-Dar Chen
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Publication number: 20200066937Abstract: A light-emitting device comprises a semiconductor layer; a pad electrode comprising a periphery disposed on the semiconductor layer; a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion connected to the first portion; and a plurality of first current blocking regions formed on the semiconductor layer, separated from the pad electrode and formed under the finger electrode, wherein one of the plurality of first current blocking regions is most close to the pad electrode and is separated from the pad electrode by a first distance, adjacent two of others of the plurality of first current blocking regions are separated from each other by a second distance, and the first distance is longer than the second distance.Type: ApplicationFiled: October 31, 2019Publication date: February 27, 2020Inventors: Chien-Hua CHOU, Tai-Chun WANG, Chih-Tsung SU, Biau-Dar CHEN
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Patent number: 10505076Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 ?m.Type: GrantFiled: December 24, 2018Date of Patent: December 10, 2019Assignee: Epistar CorporationInventors: Chien-Hua Chou, Tai-Chun Wang, Chih-Tsung Su, Biau-Dar Chen
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Publication number: 20190148595Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 ?m.Type: ApplicationFiled: December 24, 2018Publication date: May 16, 2019Inventors: Chien-Hua CHOU, Tai-Chun WANG, Chih-Tsung SU, Biau-Dar CHEN
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Patent number: 10199542Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 ?m.Type: GrantFiled: October 24, 2016Date of Patent: February 5, 2019Assignee: EPISTAR CORPORATIONInventors: Chien-Hua Chou, Tai-Chun Wang, Chih-Tsung Su, Biau-Dar Chen
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Publication number: 20170179343Abstract: A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 ?m.Type: ApplicationFiled: October 24, 2016Publication date: June 22, 2017Inventors: Chien-Hua CHOU, Tai-Chun WANG, Chih-Tsung SU, Biau-Dar CHEN
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Patent number: 9530934Abstract: A light-emitting device includes a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode includes a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion includes a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 ?m.Type: GrantFiled: December 22, 2015Date of Patent: December 27, 2016Assignee: EPISTAR CORPORATIONInventors: Chien-Hua Chou, Tai-Chun Wang, Biau-Dar Chen, Chih-Tsung Su
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Patent number: 9224912Abstract: A method of fabricating an optoelectronic device, comprises: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate after forming the supporting layer; and cleaving the substrate.Type: GrantFiled: February 25, 2015Date of Patent: December 29, 2015Assignee: EPISTAR CORPORATIONInventors: Cheng Hsiang Ho, Biau-Dar Chen, Liang Sheng Chi, Chun Chang Chen, Pei Shan Fang
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Publication number: 20150187986Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate after forming the supporting layer; and cleaving the substrate.Type: ApplicationFiled: February 25, 2015Publication date: July 2, 2015Inventors: Cheng Hsiang HO, Biau-Dar CHEN, Liang Sheng CHI, Chun Chang CHEN, Pei Shan FANG
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Patent number: 8987752Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate, wherein the supporting layer is formed before forming the plurality of first modified regions; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of first modified regions.Type: GrantFiled: May 17, 2013Date of Patent: March 24, 2015Assignee: Epistar CorporationInventors: Cheng Hsiang Ho, Biau-Dar Chen, Liang Sheng Chi, Chun Chang Chen, Pei Shan Fang
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Publication number: 20130306993Abstract: A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing an first energy into the substrate; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of the first modified regions.Type: ApplicationFiled: May 17, 2013Publication date: November 21, 2013Inventors: Cheng Hsiang Ho, Biau-Dar Chen, Liang Sheng Chi, Chun Chang Chen, Pei Shan Fang
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Publication number: 20130130417Abstract: A method for manufacturing a light-emitting device includes steps of: providing a substrate comprising an upper surface and a lower surface opposite to the upper surface; processing the upper surface to be an uneven surface; forming a light-emitting structure on the upper surface of the substrate; and forming a hole through the substrate by radiating a coherent laser beam to the lower surface of the substrate for a predetermined time; wherein the band gap energy of the coherent laser beam is higher than the band gap energy of the substrate thereby the substrate is etched away by the laser beam.Type: ApplicationFiled: November 22, 2011Publication date: May 23, 2013Inventors: Jar-Yu WU, Biau-Dar Chen, Chun-Lung Tseng, Chih-Hung Wang, Hung-Yao Lin
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Publication number: 20050082562Abstract: A nitride light emitting device includes a substrate, a first nitride semiconductor stack formed above the substrate, the first nitride semiconductor stack having an epitaxial surface and a first rough surface, a distance from the epitaxial surface to the substrate being not less than a distance from the rough surface to the substrate, a nitride emitting layer formed on the epitaxial surface, and a second nitride semiconductor stack formed on the nitride emitting layer for promoting the efficiency of capturing light emitted from an LED.Type: ApplicationFiled: October 15, 2003Publication date: April 21, 2005Inventors: Chen Ou, Biau-Dar Chen, Shane-Shyan Wey, Yen-Ting Tsai