Patents by Inventor Bidan Zhang
Bidan Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9240482Abstract: A stressor structure is formed within a drain region of an access transistor in a dynamic random access memory (DRAM) cell in a semiconductor-on-insulator (SOI) substrate without forming any stressor structure in a source region of the DRAM cell. The stressor structure induces a stress gradient within the body region of the access transistor, which induces a greater leakage current at the body-drain junction than at the body-source junction. The body potential of the access transistor has a stronger coupling to the drain voltage than to the source voltage. An asymmetric etch of a gate dielectric cap, application of a planarization material layer, and a non-selective etch of the planarization material layer and the gate dielectric cap can be employed to form the DRAM cell.Type: GrantFiled: September 4, 2014Date of Patent: January 19, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Ravi K. Dasaka, Shreesh Narasimha, Ahmed Nayaz Noemaun, Karen A. Nummy, Katsunori Onishi, Paul C. Parries, Chengwen Pei, Geng Wang, Bidan Zhang
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Publication number: 20150349121Abstract: A stressor structure is formed within a drain region of an access transistor in a dynamic random access memory (DRAM) cell in a semiconductor-on-insulator (SOI) substrate without forming any stressor structure in a source region of the DRAM cell. The stressor structure induces a stress gradient within the body region of the access transistor, which induces a greater leakage current at the body-drain junction than at the body-source junction. The body potential of the access transistor has a stronger coupling to the drain voltage than to the source voltage. An asymmetric etch of a gate dielectric cap, application of a planarization material layer, and a non-selective etch of the planarization material layer and the gate dielectric cap can be employed to form the DRAM cell.Type: ApplicationFiled: September 4, 2014Publication date: December 3, 2015Inventors: Ravi K. Dasaka, Shreesh Narasimha, Ahmed Nayaz Noemaun, Karen A. Nummy, Katsunori Onishi, Paul C. Parries, Chengwen Pei, Geng Wang, Bidan Zhang
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Patent number: 7275817Abstract: Disclosed is a process for forming a channel wafer for a novel ink jet printhead, having an ink particle-filter layer over the ink-inlet surface thereof. The process includes the steps of applying a thin coating of a heat-curable, photopatternable polymer composition to an intermediate substrate having a release surface and drying the coating to form a semi-solid adhesive layer. The layer and supporting substrate are pressed against the ink-inlet surface of a channel wafer with an optional adhesive layer to bond the layer to the ink inlet surface. The substrate is separated to transfer the contacting area of the semi-solid layer to the ink-inlet surface as a laminate, and the semi-solid layer is exposed through a filter-forming mask and ink particle-filter openings are developed therethrough, either before or after transfer of the semi-solid adhesive layer from the intermediate substrate to the ink-inlet surface of the channel wafer, and the filter layer is cured.Type: GrantFiled: May 20, 2005Date of Patent: October 2, 2007Assignee: Xerox CorporationInventors: Shan Clark, Gary Kneezel, Ram Narang, Bidan Zhang, Almon Fisher
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Patent number: 7101030Abstract: Disclosed is a process for forming a channel wafer for a novel ink jet printhead, having an ink particle-filter layer over the ink-inlet surface thereof. The process comprises the steps of applying a thin coating of a heat-curable, photopatternable polymer composition to an intermediate substrate having a release surface and drying the coating to form a semi-solid adhesive layer. The layer and supporting substrate are pressed against the ink-inlet surface of a channel wafer with an optional adhesive layer to bond the layer to the ink inlet surface. The substrate is separated to transfer the contacting area of the semi-solid layer to the ink-inlet surface as a laminate, and the semi-solid layer is exposed through a filter-forming mask and ink particle-filter openings are developed therethrough, either before or after transfer of the semi-solid adhesive layer from the intermediate substrate to the ink-inlet surface of the channel wafer, and the filter layer is cured.Type: GrantFiled: May 21, 2003Date of Patent: September 5, 2006Assignee: Xerox CorporationInventors: Shan Clark, Gary Kneezel, Ram Narang, Bidan Zhang, Almon Fisher
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Patent number: 6982022Abstract: Disclosed is a process for forming a novel ink jet printhead which comprises: (a) providing a lower substrate in which one surface thereof has an array of drop generating elements and addressing electrodes formed thereon; (b) depositing onto the release surface of an intermediate film support a photopatternable layer comprising a precursor polymer which is a phenolic novolac resin having glycidyl ether functional groups; (c) prebaking the photopatternable layer to dry, semi-solid condition; (d) laminating the dry, semi-solid layer to the surface of the lower substrate under heat and pressure and separating it from the release surface of the intermediate film support; (e) exposing the photopatternable layer to actinic radiation in an imagewise pattern corresponding to ink nozzles and developing to form a nozzle plate section, and (f) removing the precursor polymer from the unexposed areas, thereby forming ink nozzle recesses which are aligned to communicate with the drop generating elements and terminal ends oType: GrantFiled: May 21, 2003Date of Patent: January 3, 2006Assignee: Xerox CorporationInventors: Shan Clark, Gary Kneezel, Ram Narang, Bidan Zhang, Almon Fisher
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Publication number: 20050214673Abstract: Disclosed is a process for forming a channel wafer for a novel ink jet printhead, having an ink particle-filter layer over the ink-inlet surface thereof. The process comprises the steps of applying a thin coating of a heat-curable, photopatternable polymer composition to an intermediate substrate having a release surface and drying the coating to form a semi-solid adhesive layer. The layer and supporting substrate are pressed against the ink-inlet surface of a channel wafer with an optional adhesive layer to bond the layer to the ink inlet surface. The substrate is separated to transfer the contacting area of the semi-solid layer to the ink-inlet surface as a laminate, and the semi-solid layer is exposed through a filter-forming mask and ink particle-filter openings are developed therethrough, either before or after transfer of the semi-solid adhesive layer from the intermediate substrate to the ink-inlet surface of the channel wafer, and the filter layer is cured.Type: ApplicationFiled: May 20, 2005Publication date: September 29, 2005Inventors: Shan Clark, Gary Kneezel, Ram Narang, Bidan Zhang, Almon Fisher
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Patent number: 6838347Abstract: A method for reducing line edge roughness (LER) of a semiconductor gate structure includes patterning a photoresist layer formed over an oxide hardmask layer. The photoresist layer is etched so as to transfer a photoresist pattern to the oxide hardmask layer, the photoresist pattern having an initial LER. The exposed surfaces of the oxide hardmask are etched with a chemical oxide removal (COR) so as to form a reaction product on the exposed surfaces, wherein concave portions of the exposed surfaces are etched at a reduced rate with respect to convex portions of the exposed surfaces.Type: GrantFiled: September 23, 2003Date of Patent: January 4, 2005Assignee: International Business Machines CorporationInventors: Joyce C. Liu, Wesley C. Natzle, Richard S. Wise, Hongwen Yan, Bidan Zhang
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Publication number: 20040233261Abstract: Disclosed is a process for forming a channel wafer for a novel ink jet printhead, having an ink particle-filter layer over the ink-inlet surface thereof. The process comprises the steps of applying a thin coating of a heat-curable, photopatternable polymer composition to an intermediate substrate having a release surface and drying the coating to form a semi-solid adhesive layer. The layer and supporting substrate are pressed against the ink-inlet surface of a channel wafer with an optional adhesive layer to bond the layer to the ink inlet surface. The substrate is separated to transfer the contacting area of the semi-solid layer to the ink-inlet surface as a laminate, and the semi-solid layer is exposed through a filter-forming mask and ink particle-filter openings are developed therethrough, either before or after transfer of the semi-solid adhesive layer from the intermediate substrate to the ink-inlet surface of the channel wafer, and the filter layer is cured.Type: ApplicationFiled: May 21, 2003Publication date: November 25, 2004Applicant: Xerox CorporationInventors: Shan Clark, Gary Kneezel, Ram Narang, Bidan Zhang, Almon Fisher
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Publication number: 20040231780Abstract: Disclosed is a process for forming a novel ink jet printhead which comprises: (a) providing a lower substrate in which one surface thereof has an array of drop generating elements and addressing electrodes formed thereon; (b) depositing onto the release surface of an intermediate film support a photopatternable layer comprising a precursor polymer which is a phenolic novolac resin having glycidyl ether functional groups; (c) prebaking the photopatternable layer to dry, semi-solid condition; (d) laminating the dry, semi-solid layer to the surface of the lower substrate under heat and pressure and separating it from the release surface of the intermediate film support; (e) exposing the photopatternable layer to actinic radiation in an imagewise pattern corresponding to ink nozzles and developing to form a nozzle plate section, and (f) removing the precursor polymer from the unexposed areas, thereby forming ink nozzle recesses which are aligned to communicate with the drop generating elements and terminal ends oType: ApplicationFiled: May 21, 2003Publication date: November 25, 2004Applicant: Xerox CorporationInventors: Shan Clark, Gary Kneezel, Ram Narang, Bidan Zhang, Almon Fisher
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Patent number: 6260956Abstract: Disclosed is an ink jet printhead which comprises (i) an upper substrate with a set of parallel grooves for subsequent use as ink channels and a recess for subsequent use as a manifold, the grooves being open at one end for serving as droplet emitting nozzles, and (ii) a lower substrate in which one surface thereof has an array of heating elements and addressing electrodes formed thereon, said lower substrate having an insulative layer deposited on the surface thereof and over the heating elements and addressing electrodes and patterned to form recesses therethrough to expose the heating elements and terminal ends of the addressing electrodes, the upper and lower substrates being aligned, mated, and bonded together to form the printhead with the grooves in the upper substrate being aligned with the heating elements in the lower substrate to form droplet emitting nozzles, said upper substrate comprising a material formed by crosslinking or chain extending a polymer of formula I or II.Type: GrantFiled: July 23, 1998Date of Patent: July 17, 2001Assignee: Xerox CorporationInventors: Ram S. Narang, Gary A. Kneezel, Bidan Zhang, Almon P. Fisher, Timothy J. Fuller
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Patent number: 6187512Abstract: Disclosed is a process which comprises reacting a polymer of the general formula wherein x is an integer of 0 or 1, A is one of several specified groups, such as B is one of several specified groups, such as or mixtures thereof, and n is an integer representing the number of repeating monomer units, with a halomethyl alkyl ether, an acetyl halide, and methanol in the presence of a halogen-containing Lewis acid catalyst, thereby forming a halomethylated polymer.Type: GrantFiled: May 17, 1999Date of Patent: February 13, 2001Assignee: Xerox CorporationInventors: Daniel A. Foucher, Nancy C. Stoffel, Roger T. Janezic, Thomas W. Smith, David J. Luca, Bidan Zhang
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Patent number: 6020119Abstract: Disclosed is a process which comprises reacting a polymer of the general formula ##STR1## or ##STR2## wherein x is an integer of 0 or 1, A is one of several specified groups, such as ##STR3## B is one of several specified groups, such as or mixtures thereof, and n is an integer representing the number of repeating monomer units, with a halomethylethyl ether, a hydrohalic acid, and acetic acid in the presence of a halogen-containing Lewis acid catalyst, thereby forming a halomethylated polymer.Type: GrantFiled: May 17, 1999Date of Patent: February 1, 2000Assignee: Xerox CorporationInventors: Daniel A. Foucher, Nancy C. Stoffel, Roger T. Janezic, Thomas W. Smith, David J. Luca, Bidan Zhang