Patents by Inventor Bigidis Dosdos

Bigidis Dosdos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wafer level MOSFET metallization
    Patent number: 8866218
    Abstract: In one general aspect, a system can include a through-silicon-via (TSV) coupling a drain region associated with a vertical transistor to a back metal disposed on a second side of the substrate opposite the first side. The system can include a first metal layer, and a second metal layer aligned orthogonal to the first metal layer. The system can define a conduction path extending substantially vertically through the TSV to the substrate and laterally through the substrate.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: October 21, 2014
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Daniel M. Kinzer, Steven Sapp, Chung-Lin Wu, Oseob Jeon, Bigidis Dosdos
  • WAFER LEVEL MOSFET METALLIZATION
    Publication number: 20130277735
    Abstract: Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having excellent electrical performance with low drain-to-source resistance RDS(on) include using a two-metal drain contact technique. The RDS(on) is further improved by using a through-silicon-via (TSV) technique to form a drain contact or by using a copper layer closely connected to the drain drift.
    Type: Application
    Filed: June 14, 2013
    Publication date: October 24, 2013
    Inventors: Daniel M. KINZER, Steven SAPP, Chung-Lin WU, Oseob JEON, Bigidis DOSDOS
  • Wafer Level MOSFET Metallization
    Publication number: 20120248526
    Abstract: Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having excellent electrical performance with low drain-to-source resistance RDS(on) include using a two-metal drain contact technique. The RDS(on) is further improved by using a through-silicon-via (TSV) technique to form a drain contact or by using a copper layer closely connected to the drain drift.
    Type: Application
    Filed: March 29, 2011
    Publication date: October 4, 2012
    Inventors: Daniel M. Kinzer, Steven Sapp, Chung-Lin Wu, Oseob Jeon, Bigidis Dosdos