Abstract: A multi-axis fiber Bragg grating sensing system has a plurality of spatially distributed and mechanically isolated three dimensional multi-axis sensing towers, each having a plurality of connected nonparallel sensing pillars having a straight portion of a length and straightness to support a fiber Bragg grating and connected to at least one other of the three dimensional multi-axis sensing towers via a curved portion having a curvature radius equal to the minimum bend radius of an affixed optical fiber. The optical fiber has a plurality of fiber Bragg gratings and is affixed to each of the dimensional multi-axis sensing towers wherein a fiber Bragg grating is positioned along a straight portion of a sensing pillar of each of the towers. An interrogator captures and measures wavelength data from the fiber Bragg gratings for measuring multi-axis force information applied to each of the three dimensional multi-axis sensing towers.

Abstract: System and methods for refurbishing fuel cell stack components, the methods including singulating the stack using a splitting apparatus or a liquid nitrogen bath. Fuel cell debris may be removed from interconnects of the fuel cell stack using laser heating, flame heating, a die, sonication, a nubbed roller, grit blasting, and/or a high pressure fluid.

Abstract: System and methods for refurbishing fuel cell stack components, the methods including singulating the stack using a splitting apparatus or a liquid nitrogen bath. Fuel cell debris may be removed from interconnects of the fuel cell stack using laser heating, flame heating, a die, sonication, a nubbed roller, grit blasting, and/or a high pressure fluid.

Abstract: Disclosed are techniques to provide an integrated circuit, including the provision of improved integrated circuit isolation structures. The techniques include forming a number of trenches in an integrated circuit substrate to define a number of substrate regions that are to be electrically isolated from one another. A dielectric material is deposited in the trenches by exposure to a high density plasma having a first deposition-to-etch ratio. The high density plasma is adjusted to a second deposition-to-etch ratio greater than the first ratio to accumulate the dielectric material on the substrate after at least partially filling the trenches. A portion of the dielectric material is removed to planarize the workpiece. A number of components, such as insulated gate field effect transistors, may be subsequently formed in the substrate regions between the trenches.

Abstract: A method is presented in which nitrogen-based gas in incorporated in polysilicon gate re-oxidation to improve hot carrier performance. A gate oxide layer is formed. Gate material is deposited on the gate oxide layer. The gate material is etched to form a gate structure. The gate oxide layer and the gate are re-oxidized. During re-oxidation, nitrogen-based gas is introduced to nitridize re-oxidized portions of the gate oxide layer.