Patents by Inventor Bikram Kapoor
Bikram Kapoor has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7628897Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.Type: GrantFiled: September 12, 2003Date of Patent: December 8, 2009Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor
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Patent number: 7595088Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.Type: GrantFiled: August 10, 2004Date of Patent: September 29, 2009Assignee: Applied Materials, Inc.Inventors: Bikram Kapoor, M. Ziaul Karim, Anchuan Wang
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Patent number: 7229931Abstract: Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.Type: GrantFiled: June 16, 2004Date of Patent: June 12, 2007Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Young S Lee, Manoj Vellaikal, Karen Greig, Bikram Kapoor
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Patent number: 7205240Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.Type: GrantFiled: June 4, 2003Date of Patent: April 17, 2007Assignee: Applied Materials, Inc.Inventors: M. Ziaul Karim, Bikram Kapoor, Anchuan Wang, Dong Qing Li, Katsunari Ozeki, Manoj Vellaikal, Zhuang Li
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Publication number: 20050282398Abstract: Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.Type: ApplicationFiled: June 16, 2004Publication date: December 22, 2005Applicant: APPLIED MATERIALS, INC., A Delaware corporationInventors: Hemant Mungekar, Young Lee, Manoj Vellaikal, Karen Greig, Bikram Kapoor
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Publication number: 20050260356Abstract: A film is deposited over a substrate by flowing a process gas to a process chamber and flowing a fluent gas to the process chamber. The process gas includes a silicon-containing gas and an oxygen-containing gas. The fluent gas includes a flow of helium and a flow of molecular hydrogen, the flow of molecular hydrogen being provided at a flow rate less than 20% of a flow rate of the helium. A plasma is formed in the process chamber with a density greater than 1011 ions/cm3. The film is deposited over the substrate with the plasma.Type: ApplicationFiled: May 18, 2004Publication date: November 24, 2005Applicant: APPLIED MATERIALS, INC.Inventors: Hemant Mungekar, Bikram Kapoor, Zhuang Li
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Patent number: 6890597Abstract: A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.Type: GrantFiled: May 9, 2003Date of Patent: May 10, 2005Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Bruno Geoffrion, Michael S. Cox, Lin Zhang, Bikram Kapoor, Anchuan Wang, Zhenjiang Cui
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Publication number: 20050008790Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.Type: ApplicationFiled: August 10, 2004Publication date: January 13, 2005Applicant: Applied Materials, Inc.Inventors: Bikram Kapoor, M. Ziaul Karim, Anchuan Wang
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Publication number: 20040245091Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.Type: ApplicationFiled: June 4, 2003Publication date: December 9, 2004Applicant: Applied Materials, Inc.Inventors: M Ziaul Karim, Bikram Kapoor, Anchuan Wang, DongQing Li, Katsunary Ozeki, Manoj Vellaikal, Zhuang Li
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Publication number: 20040224090Abstract: A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.Type: ApplicationFiled: May 9, 2003Publication date: November 11, 2004Applicant: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Bruno Geoffrion, Michael S. Cox, Lin Zhang, Bikram Kapoor, Anchuan Wang, Zhenjiang Cui
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Patent number: 6808748Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.Type: GrantFiled: January 23, 2003Date of Patent: October 26, 2004Assignee: Applied Materials, Inc.Inventors: Bikram Kapoor, M. Ziaul Karim, Anchuan Wang
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Patent number: 6802944Abstract: A method of depositing a film on a substrate. In one embodiment, the method includes depositing a first portion of the film using a high density plasma to partially fill a gap formed between adjacent features formed on the substrate. The film deposition process is then stopped before or shortly after the entry of the gap pinches off and the film is etched to widen entry to the gap using a two step etching process that includes a first physical etch step that forms a plasma from a sputtering agent introduced into the processing chamber and biases the plasma towards the substrate and a subsequent chemical etch step that forms a plasma from a reactive etchant gas introduced into the processing chamber. After the etching sequence is complete, a second portion of the film is deposited over the first portion using a high density plasma to further fill the gap.Type: GrantFiled: October 23, 2002Date of Patent: October 12, 2004Assignee: Applied Materials, Inc.Inventors: Farhan Ahmad, Michael Awdshiew, Alok Jain, Bikram Kapoor
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Publication number: 20040146661Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.Type: ApplicationFiled: January 23, 2003Publication date: July 29, 2004Applicant: Applied Materials, Inc.Inventors: Bikram Kapoor, Ziaul Karim, Anchuan Fremont
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Publication number: 20040079728Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.Type: ApplicationFiled: September 12, 2003Publication date: April 29, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor
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Publication number: 20040079632Abstract: A method of depositing a film on a substrate disposed in a substrate processing chamber. In one embodiment the method includes depositing a first portion of the film to at partially fill a gap formed between to adjacent features formed on the substrate. The first portion of film is deposited using a high density plasma formed from a first gaseous mixture flown into the process chamber. The film deposition process is then stopped before or shortly after the entry of the gap pinches off and the film is etched to widen entry to the gap using a two step etching process that includes a first physical etch step and a subsequent chemical etch step. The physical etch step sputter etches the first portion of film by forming a plasma from a sputtering agent introduced into the processing chamber and biasing the plasma towards the substrate. After the physical etching step, the film is chemically etched by forming a plasma from a reactive etchant gas introduced into the processing chamber.Type: ApplicationFiled: October 23, 2002Publication date: April 29, 2004Applicant: Applied Materials, Inc.Inventors: Farhan Ahmad, Michael Awdshiew, Alok Jain, Bikram Kapoor
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Patent number: 6458722Abstract: A method and system for forming a layer on a substrate in a process chamber are provided. Deposition gases are provided to the process chamber and permitted to mix in the desired relative concentrations prior to the deposition step, resulting in improved composition uniformity of the layer. This may be accomplished by generating a heating plasma from a first gaseous mixture. The plasma is then terminated and a second gaseous mixture is provided to the process chamber such that the second gaseous mixture is substantially uniformly mixed. A second plasma is then generated from the second gaseous mixture to deposit the layer on the substrate.Type: GrantFiled: October 25, 2000Date of Patent: October 1, 2002Assignee: Applied Materials, Inc.Inventors: Bikram Kapoor, Kent Rossman