Patents by Inventor Bilal Manai

Bilal Manai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8183834
    Abstract: Electronic apparatus, methods of forming the electronic apparatus, and methods of operating the electronic apparatus include features of current to frequency conversion that may be implemented in a variety of applications. Additional apparatus, systems, and methods are disclosed.
    Type: Grant
    Filed: January 28, 2009
    Date of Patent: May 22, 2012
    Assignee: Atmel Corporation
    Inventors: Idir Haddani, Bilal Manai, Xavier Rabeyrin
  • Patent number: 8148754
    Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.
    Type: Grant
    Filed: June 9, 2008
    Date of Patent: April 3, 2012
    Assignee: Atmel Rousset S.A.S.
    Inventors: Maud Pierrel, Bilal Manai
  • Publication number: 20100188049
    Abstract: Electronic apparatus, methods of forming the electronic apparatus, and methods of operating the electronic apparatus include features of current to frequency conversion that may be implemented in a variety of applications. Additional apparatus, systems, and methods are disclosed.
    Type: Application
    Filed: January 28, 2009
    Publication date: July 29, 2010
    Applicant: Atmel Corporation
    Inventors: Idir Haddani, Bilal Manai, Xavier Rabeyrin
  • Patent number: 7656121
    Abstract: A system and method for charging a battery. In one embodiment, the system includes a charging circuit that charges the battery with a constant current during a first phase and charges the battery with a constant voltage during a second phase. The system also includes a control circuit for minimizing glitches when the charging transitions from the first phase to the second phase. According to the system and method disclosed herein, a battery may be charged in a controlled and reliable manner.
    Type: Grant
    Filed: February 22, 2007
    Date of Patent: February 2, 2010
    Assignee: Atmel Corporation
    Inventors: Bilal Manai, Xavier Rabeyrin
  • Publication number: 20090302393
    Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances -between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.
    Type: Application
    Filed: June 9, 2008
    Publication date: December 10, 2009
    Inventors: Maud Pierrel, Bilal Manai
  • Publication number: 20080203974
    Abstract: A system and method for charging a battery. In one embodiment, the system includes a charging circuit that charges the battery with a constant current during a first phase and charges the battery with a constant voltage during a second phase. The system also includes a control circuit for minimizing glitches when the charging transitions from the first phase to the second phase. According to the system and method disclosed herein, a battery may be charges in a controlled and reliable manner.
    Type: Application
    Filed: February 22, 2007
    Publication date: August 28, 2008
    Applicant: Atmel Corporation
    Inventors: Bilal MANAI, Xavier RABEYRIN
  • Patent number: 7385263
    Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.
    Type: Grant
    Filed: May 2, 2006
    Date of Patent: June 10, 2008
    Assignee: Atmel Corporation
    Inventors: Maud Pierrel, Bilal Manai
  • Patent number: 7323856
    Abstract: A power efficient startup circuit for activating a bandgap reference circuit is disclosed. The startup circuit uses a voltage supply having a voltage level to initiate the flow of a startup current used to activate the bandgap reference circuit. When the bandgap reference circuit starts, the startup circuit slowly charges a capacitor using the voltage supply when the startup current is flowing. The startup circuit disables quiescent current when the bandgap reference circuit is activated and a voltage of the capacitor exceeds a value equal to the difference between the voltage of the voltage supply when powered on and a voltage threshold of a switching device which disables the quiescent current. The capacitor is discharged when the voltage supply is turned off.
    Type: Grant
    Filed: February 21, 2007
    Date of Patent: January 29, 2008
    Assignee: Atmel Corporation
    Inventors: Xavier Rabeyrin, Bilal Manai, Maud Pierrel
  • Publication number: 20070257278
    Abstract: The present invention is related to a metal-oxide semiconductor field-effect transistor (MOSFET) having a symmetrical layout such that the resistance between drains and sources is reduced, thereby reducing power dissipation. Drain pads, source pads, and gates are placed on the MOSFET such that the distances between drains, sources, and gates are optimized to reduce resistance and power dissipation. The gates may be arranged in a trapezoidal arrangement in order to maximize a ratio of the gate widths to gate lengths for current driving while reducing resistance and power dissipation.
    Type: Application
    Filed: May 2, 2006
    Publication date: November 8, 2007
    Applicant: ATMEL CORPORATION
    Inventors: Maud Pierrel, Bilal Manai
  • Publication number: 20070241735
    Abstract: A power efficient startup circuit for activating a bandgap reference circuit is disclosed. The startup circuit uses a voltage supply having a voltage level to initiate the flow of a startup current used to activate the bandgap reference circuit. When the bandgap reference circuit starts, the startup circuit slowly charges a capacitor using the voltage supply when the startup current is flowing. The startup circuit disables quiescent current when the bandgap reference circuit is activated and a voltage of the capacitor exceeds a value equal to the difference between the voltage of the voltage supply when powered on and a voltage threshold of a switching device which disables the quiescent current. The capacitor is discharged when the voltage supply is turned off.
    Type: Application
    Filed: February 21, 2007
    Publication date: October 18, 2007
    Applicant: ATMEL CORPORATION
    Inventors: Xavier Rabeyrin, Bilal Manai, Maud Pierrel
  • Patent number: 7208929
    Abstract: A power efficient startup circuit for activating a bandgap reference circuit is disclosed. The startup circuit uses a voltage supply having a voltage level to initiate the flow of a startup current used to activate the bandgap reference circuit. When the bandgap reference circuit starts, the startup circuit slowly charges a capacitor using the voltage supply when the startup current is flowing. The startup circuit disables quiescent current when the bandgap reference circuit is activated and a voltage of the capacitor exceeds a value equal to the difference between the voltage of the voltage supply when powered on and a voltage threshold of a switching device which disables the quiescent current. The capacitor is discharged when the voltage supply is turned off.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: April 24, 2007
    Assignee: Atmel Corporation
    Inventors: Xavier Rabeyrin, Bilal Manai, Maud Pierrel