Abstract: The disclosed embodiments relate to a plurality of capacitive memory elements disposed on a substrate. The substrate may comprise a processor, a memory device or other integrated circuit device. The capacitive memory elements may have a generally oblong shape and may be capacitive elements. The capacitive memory elements may be disposed in a slanted orientation. The capacitive memory elements may be disposed in a non-orthogonal orientation. The capacitive memory elements may be disposed so that an axis through one of the plurality of capacitive memory elements is not generally parallel with an edge of the substrate. The axis may not be generally perpendicular with an orthogonal edge of the substrate. The plurality of capacitive memory elements may be arranged in a first row and a second row so that an axis through one of the plurality of capacitive memory elements located in the first row does not form an axis of any capacitive memory element in the second row.

Abstract: The disclosed embodiments relate to a plurality of capacitive memory elements disposed on a substrate. The substrate may comprise a processor, a memory device or other integrated circuit device. The capacitive memory elements may have a generally oblong shape and may be capacitive elements. The capacitive memory elements may be disposed in a slanted orientation. The capacitive memory elements may be disposed in a non-orthogonal orientation. The capacitive memory elements may be disposed so that an axis through one of the plurality of capacitive memory elements is not generally parallel with an edge of the substrate. The axis may not be generally perpendicular with an orthogonal edge of the substrate. The plurality of capacitive memory elements may be arranged in a first row and a second row so that an axis through one of the plurality of capacitive memory elements located in the first row does not form an axis of any capacitive memory element in the second row.

Abstract: The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and through a subresolution assist feature that is transmissive of at least a portion of the radiation. The subresolution assist feature alters a pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the subresolution assist feature. The invention further includes methods of forming radiation-patterning tools, and the radiation-patterning tools themselves.

Abstract: The disclosed embodiments relate to a plurality of capacitive memory elements disposed on a substrate. The substrate may comprise a processor, a memory device or other integrated circuit device. The capacitive memory elements may have a generally oblong shape and may be capacitive elements. The capacitive memory elements may be disposed in a slanted orientation. The capacitive memory elements may be disposed in a non-orthogonal orientation. The capacitive memory elements may be disposed so that an axis through one of the plurality of capacitive memory elements is not generally parallel with an edge of the substrate. The axis may not be generally perpendicular with an orthogonal edge of the substrate. The plurality of capacitive memory elements may be arranged in a first row and a second row so that an axis through one of the plurality of capacitive memory elements located in the first row does not form an axis of any capacitive memory element in the second row.

Abstract: Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.

Abstract: Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.

Abstract: The disclosed embodiments relate to a plurality of capacitive memory elements disposed on a substrate. The substrate may comprise a processor, a memory device or other integrated circuit device. The capacitive memory elements may have a generally oblong shape and may be capacitive elements. The capacitive memory elements may be disposed in a slanted orientation. The capacitive memory elements may be disposed in a non-orthogonal orientation. The capacitive memory elements may be disposed so that an axis through one of the plurality of capacitive memory elements is not generally parallel with an edge of the substrate. The axis may not be generally perpendicular with an orthogonal edge of the substrate. The plurality of capacitive memory elements may be arranged in a first row and a second row so that an axis through one of the plurality of capacitive memory elements located in the first row does not form an axis of any capacitive memory element in the second row.

Abstract: Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.

Abstract: Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.

Abstract: The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and at least one subresolution assist feature proximate the structure. The structure defines a pattern of radiation intensity. The at least one subresolution assist feature comprises a material that is transmissive of at least a portion of the radiation. The subresolution assist feature alters the pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the subresolution assist feature. The invention also includes another method of patterning radiation. The radiation is simultaneously passed through a first material structure and at least one second material subresolution assist feature proximate the first material structure. The second material is different than the first material.

Abstract: The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and at least one subresolution assist feature proximate the structure. The structure defines a pattern of radiation intensity. The at least one subresolution assist feature comprises a material that is transmissive of at least a portion of the radiation. The subresolution assist feature alters the pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the subresolution assist feature. The invention also includes another method of patterning radiation. The radiation is simultaneously passed through a first material structure and at least one second material subresolution assist feature proximate the first material structure. The second material is different than the first material.

Abstract: The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and through a sub resolution assist feature that is transmissive of at least a portion of the radiation. The sub resolution assist feature alters a pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the sub resolution assist feature. The invention further includes methods of forming radiation-patterning tools, and the radiation-patterning tools themselves.

Abstract: The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and at least one subresolution assist feature proximate the structure. The structure defines a pattern of radiation intensity. The at least one subresolution assist feature comprises a material that is transmissive of at least a portion of the radiation. The subresolution assist feature alters the pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the subresolution assist feature. The invention also includes another method of patterning radiation. The radiation is simultaneously passed through a first material structure and at least one second material subresolution assist feature proximate the first material structure. The second material is different than the first material.

Abstract: The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and at least one subresolution assist feature proximate the structure. The structure defines a pattern of radiation intensity. The at least one subresolution assist feature comprises a material that is transmissive of at least a portion of the radiation. The subresolution assist feature alters the pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the subresolution assist feature. The invention also includes another method of patterning radiation. The radiation is simultaneously passed through a first material structure and at least one second material subresolution assist feature proximate the first material structure. The second material is different than the first material.

Abstract: Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.

Abstract: Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.

Abstract: Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.

Abstract: Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.

Abstract: The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and at least one subresolution assist feature proximate the structure. The structure defines a pattern of radiation intensity. The at least one subresolution assist feature comprises a material that is transmissive of at least a portion of the radiation. The subresolution assist feature alters the pattern of radiation intensity defined by the structure relative to a pattern of radiation intensity that would be defined in the absence of the subresolution assist feature. The invention also includes another method of patterning radiation. The radiation is simultaneously passed through a first material structure and at least one second material subresolution assist feature proximate the first material structure. The second material is different than the first material.

Abstract: Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.