Abstract: A high-density plasma source (100) is disclosed. The source includes an annular insulating body (300) with an annular cavity (316) formed within. An inductor coil (340) serving as an antenna is arranged within the annular cavity and is operable to generate a first magnetic field within a plasma duct (60) interior region (72) and inductively couple to the plasma when the annular body is arranged to surround a portion of the plasma duct. A grounded conductive housing (400) surrounds the annular insulating body. An electrostatic shield (360) is arranged adjacent the inner surface of the insulating body and is grounded to the conductive housing. Upper and lower magnet rings (422 and 424) are preferably arranged adjacent the upper and lower surfaces of the annular insulating body outside of the conductive housing. A T-match network is in electrical communication with said inductor coil and is adapted to provide for efficient transfer of RF power from an RF power source to the plasma.

Abstract: A non-linear test load is provided for calibrating a plasma system. The test load is a substrate for modeling the electrical characteristics of the plasma such that multi frequency testing can be performed in the absence of a plasma reaction. An exemplary substrate includes a first semiconductor junction for providing a non-linear response to the multi-frequency RF source provided from the anode. The first semiconductor junction exhibits a first capacitance for modeling a first plasma sheath of the anode. A plasma component is responsive to the first semiconductor junction and exhibits a resistance for modeling a resistance of the plasma, an inductance for modeling an inductance of the plasma, and a gap capacitance for modeling capacitance of the plasma.

Abstract: A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, ?i, ?i, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, ?i is the on-time of the RF power for the ith RF feed line, ?i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines.

Abstract: An apparatus (14) for and method of measuring impedance in a capacitively coupled plasma reactor system (10). The apparatus includes a high-frequency RF source (150) in electrical communication with an upper electrode (50). A first high-pass filter (130) is arranged between the upper electrode and the high-frequency RF source, to block low-frequency, high-voltage signals from the electrode RF power source (66) from passing through to the impedance measuring circuit A current-voltage probe (140) is arranged between the high-frequency source and the high-pass filter, and is used to measure the current and voltage of the probe signal with and without the plasma present. An amplifier (250) is electrically connected to the current-voltage probe, and a data acquisition unit (260) is electrically connected to the amplifier.

Abstract: A high efficiency plasma pump for use in a plasma processing system that includes a plasma processing device having a first plasma density proximate a processing region and a second plasma density proximate an exit region is disclosed. The plasma pump includes an inter-stage plasma (ISP) source fluidly coupled to the plasma processing device proximate the exit region, the ISP source comprising an inter-stage plasma region having a third plasma density; and a plasma pump fluidly coupled to the ISP, the plasma pump having a fourth plasma density, wherein pumping speed is dependent upon the third plasma density and the fourth plasma density. The ISP source increasing the third plasma density to increase the pumping efficiency.

Abstract: A closed-drift Hall effect plasma vacuum pump includes one or more pumping conduits which are linked with a radial magnetic field. The magnetic field separates a plasma from a plasma at a higher pressure which is formed by cross-field plasma transport from a plasma processing region.

Abstract: A method for determining the potential of a plasma in a processing chamber includes determining voltages of respective plasma engaging surfaces of at least two plasma generating electrodes disposed within the processing chamber and determining the plasma potential by comparing the determined voltages and equating the highest determined voltage to the plasma potential.

Abstract: A stand-alone plasma vacuum pump for pumping gas from a low-pressure inlet to a high-pressure outlet, composed of: a housing enclosing one or more pumping regions located between the inlet and the outlet; a plurality of permanent magnet assemblies providing magnetic fields that extend in the pumping region between the inlet and the outlet, the magnetic field forming magnetic flux channels for guiding and confining plasmas; elements disposed for coupling microwave power into the flux channels to heat electrons, ionize gas, and accelerate plasma ions in a direction from the inlet to the outlet; elements disposed for creating an electric in the magnetic flux channels to accelerate ions in the flux channels toward the outlet by momentum transfer; and a differential conductance baffle proximate to the outlet for promoting flow of plasma ions and neutral atoms to the outlet.

Abstract: A plasma processing apparatus includes a source gas injection device to inject a gaseous source material into a source region of the apparatus, a plasma generating device to transmit energy to the source material to generate a source plasma, and a process gas injection device to inject a gaseous process material into a process region of the apparatus. A magnetic filter assembly imposes a magnetic field generally between the source and process regions to control the flow of charged particles from the source plasma into the gaseous process material to generate a process plasma in the process region. A source electrode in contact with the source plasma controls the potential of the source plasma. An electrode supports a workpiece and generates a potential to attract charged particles from the process plasma toward the workpiece so that the charged particles strike the workpiece.

Abstract: A non-linear test load is provided for calibrating a plasma system. The test load is a substrate for modeling the electrical characteristics of the plasma such that multi frequency testing can be performed in the absence of a plasma reaction. An exemplary substrate includes a first semiconductor junction for providing a non-linear response to the multi-frequency RF source provided from the anode. The first semiconductor junction exhibits a first capacitance for modeling a first plasma sheath of the anode. A plasma component is responsive to the first semiconductor junction and exhibits a resistance for modeling a resistance of the plasma, an inductance for modeling an inductance of the plasma, and a gap capacitance for modeling capacitance of the plasma.

Abstract: A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, &tgr;i, &PHgr;i, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, &tgr;i is the on-time of the RF power for the ith RF feed line, &PHgr;i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines.

Abstract: A high efficiency plasma pump for use in a plasma processing system that includes a plasma processing device having a first plasma density proximate a processing region and a second plasma density proximate an exit region is disclosed. The plasma pump includes an inter-stage plasma (ISP) source fluidly coupled to the plasma processing device proximate the exit region, the ISP source comprising an inter-stage plasma region having a third plasma density; and a plasma pump fluidly coupled to the ISP, the plasma pump having a fourth plasma density, wherein pumping speed is dependent upon the third plasma density and the fourth plasma density. The ISP source increasing the third plasma density to increase the pumping efficiency.

Abstract: A closed-drift Hall effect plasma vacuum pump includes one or more pumping conduits which are linked with a radial magnetic field. The magnetic field separates a plasma from a plasma at a higher pressure which is formed by cross-field plasma transport from a plasma processing region.

Abstract: An apparatus (14) for and method of measuring impedance in a capacitively coupled plasma reactor system (10). The apparatus includes a high-frequency RF source (150) in electrical communication with an upper electrode (50). A first high-pass filter (130) is arranged between the upper electrode and the high-frequency RF source, to block low-frequency, high-voltage signals from the electrode RF power source (66) from passing through to the impedance measuring circuit A current-voltage probe (140) is arranged between the high-frequency source and the high-pass filter, and is used to measure the current and voltage of the probe signal with and without the plasma present. An amplifier (250) is electrically connected to the current-voltage probe, and a data acquisition unit (260) is electrically connected to the amplifier.

Abstract: A method for determining the potential of a plasma in a processing chamber includes determining voltages of respective plasma engaging surfaces of at least two plasma generating electrodes disposed within the processing chamber and determining the plasma potential by comparing the determined voltages and equating the highest determined voltage to the plasma potential.

Abstract: A plasma vacuum pump including an array of permanent magnets, one or more plasma conduits or ducts, components for accelerating plasma ions through these conduits, and supporting structures that together comprise at least one applied plasma duct system (APDS) cell. The APDS cell permits large volumes of particles and plasma to flow rapidly in a preferred direction while constricting the flow of neutral particles in the reverse direction. A plasma pump utilizing APDS technology is intended to permit a large throughput of ionized gas at the intermediate pressures of interest in the plasma-enhanced processing industry, compressing this gas to a pressure at which blower-type pumps can be used efficiently to exhaust the spent processing gas at atmospheric pressure.

Abstract: A capacitively coupled plasma reactor composed of: a reactor chamber enclosing a plasma region; upper and lower main plasma generating electrodes for generating a processing plasma in a central portion of the plasma region by transmitting electrical power from a power source to the central portion while a gas is present in the plasma region; and a magnetic mirror including at least one set of magnets for maintaining a boundary layer plasma in a boundary portion of the plasma region around the processing plasma.

Abstract: A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, &tgr;i, &PHgr;i, Pi, S; Li} is defined, herein n is the number of RF feed lines connected to the electrode upper surface at locations Li, &tgr;i is the on-time of the RF power for the ith RF feed line, &PHgr;i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines.

Abstract: A stand-alone plasma vacuum pump for pumping gas from a low-pressure inlet to a high-pressure outlet, composed of: a housing enclosing one or more pumping regions located between the inlet and the outlet; a plurality of permanent magnet assemblies providing magnetic fields that extend in the pumping region between the inlet and the outlet, the magnetic field forming magnetic flux channels for guiding and confining plasmas; elements disposed for coupling microwave power into the flux channels to heat electrons, ionize gas, and accelerate plasma ions in a direction from the inlet to the outlet; elements disposed for creating an electric in the magnetic flux channels to accelerate ions in the flux channels toward the outlet by momentum transfer; and a differential conductance baffle proximate to the outlet for promoting flow of plasma ions and neutral atoms to the outlet while impeding flow of neutral gas molecules in a direction from the outlet toward the inlet.

Abstract: A plasma vacuum pump including an array of permanent magnets, one or more plasma conduits or ducts, means for accelerating plasma ions through these conduits, and supporting structures that together comprise at least one applied plasma duct system (APDS) cell. The APDS cell permits large volumes of particles and plasma to flow rapidly in a preferred direction while constricting the flow of neutral particles in the reverse direction. A plasma pump utilizing APDS technology is intended to permit a large throughput of ionized gas at the intermediate pressures of interest in the plasma-enhanced processing industry, compressing this gas to a pressure at which blower-type pumps can be used efficiently to exhaust the spent processing gas at atmospheric pressure.