Patents by Inventor Bill Klaasen

Bill Klaasen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing metal interconnect structure for an integrated circuit with improved electromigration reliability
    Patent number: 5798301
    Abstract: A multilayer interconnect structure for a semiconductor integrated circuit comprising a base layer of titanium, a second layer of titanium nitride, a third layer of an aluminum alloy and a top layer of titanium nitride. All of the layers contained within the multilayer interconnect structure are deposited by in-situ deposition in an ultra-high vacuum deposition system. The different layers deposited in the deposition system are conducted consecutively without a disruption to the vacuum. Although each layer in the multilayer interconnect structure are deposited within the integrated ultra-high vacuum deposition system, with multiple deposition chambers, the deposition of the different layers is conducted at different temperatures. The time to the electromigration failure of the multilayer interconnect structure, caused by the electromigration of the aluminum alloy, is greatly increased by depositing the aluminum alloy layer at a temperature in excess of 300.degree. C. and preferably between 350.degree. C.
    Type: Grant
    Filed: April 29, 1997
    Date of Patent: August 25, 1998
    Assignees: Siemens Aktiengesellschaft, International Business Machines Corporation
    Inventors: Pei-Ing Paul Lee, Bernd Vollmer, Darryl Restaino, Bill Klaasen
  • Metal interconnect structure for an integrated circuit with improved electromigration reliability
    Patent number: 5641992
    Abstract: A multilayer interconnect structure for a semiconductor integrated circuit comprising a base layer of titanium, a second layer of titanium nitride, a third layer of an aluminum alloy and a top layer of titanium nitride. All of the layers contained within the multilayer interconnect structure are deposited by in-situ deposition in an ultra-high vacuum deposition system. The different layers deposited in the deposition system are conducted consecutively without a disruption to the vacuum. Although each layer in the multilayer interconnect structure are deposited within the integrated ultra-high vacuum deposition system, with multiple deposition chambers, the deposition of the different layers is conducted at different temperatures. The time to the electromigration failure of the multilayer interconnect structure, caused by the electromigration of the aluminum alloy, is greatly increased by depositing the aluminum alloy layer at a temperature in excess of 300.degree. C. and preferably between 350.degree. C.
    Type: Grant
    Filed: August 10, 1995
    Date of Patent: June 24, 1997
    Assignees: Siemens Components, Inc., International Business Machines Corporation
    Inventors: Pei-Ing Paul Lee, Bernd Vollmer, Darryl Restaino, Bill Klaasen