Patents by Inventor Bill Perez

Bill Perez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Laser employing a zinc-doped tunnel-junction
    Patent number: 7180923
    Abstract: An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.
    Type: Grant
    Filed: February 13, 2003
    Date of Patent: February 20, 2007
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: David Bour, Chaokun Lin, Michael Tan, Bill Perez
  • Laser employing a zinc-doped tunnel-junction
    Publication number: 20040161013
    Abstract: An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.
    Type: Application
    Filed: February 13, 2003
    Publication date: August 19, 2004
    Inventors: David Bour, Chaokun Lin, Michael Tan, Bill Perez