Abstract: Systems and methods for identifying and providing unfulfilled services to a user of a provider institution mobile application are provided. A method includes: identifying an unfulfilled service of the user of the provider institution mobile application based on an indication that the user has a pending service that requires further action on behalf of the user; scanning a digital calendar of a mobile device of the user hosting the provider institution mobile application based on receiving a user input to access the digital calendar; determining an availability of the user based on scanning the digital calendar; identifying a current location of the user during the determined availability; determining a plurality of service locations near the identified current location of the user during the determined availability; and prompting the user to visit an identified service location from the plurality of service locations.

Abstract: An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.

Abstract: An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.