Patents by Inventor Bill Sinclair

Bill Sinclair has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Grating-based evanescent field molecular sensor using a thin silicon waveguide layer
    Patent number: 8796012
    Abstract: A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.
    Type: Grant
    Filed: December 2, 2009
    Date of Patent: August 5, 2014
    Assignee: National Research Council of Canada
    Inventors: Bill Sinclair, Jens Schmid, Philip Waldron, Dan-Xia Xu, Adam Densmore, Trevor Mischki, Greg Lopinski, Jean Lapointe, Daniel Poitras, Siegfried Janz
  • GRATING-BASED EVANESCENT FIELD MOLECULAR SENSOR USING A THIN SILICON WAVEGUIDE LAYER
    Publication number: 20110223688
    Abstract: A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.
    Type: Application
    Filed: December 2, 2009
    Publication date: September 15, 2011
    Inventors: Bill Sinclair, Jens Schmid, Philip Waldron, Dan-Xia Xu, Adam Densmore, Trevor Mischki, Greg Lopointe, Jean Lapointe, Daniel Poitras, Siegfried Janz