Abstract: A method of fabricating an integrated circuit includes forming a patterned dielectric layer, which includes a first pattern of openings, over a substrate and implanting a first n-type dopant into the substrate through the patterned dielectric layer to form a first doped region. The method continues with forming a patterned photoresist layer overlying the patterned dielectric layer, which includes a second pattern of openings and implanting a second n-type dopant into the substrate through the patterned photoresist layer and patterned dielectric layer to form a second doped region. The patterned photoresist layer and patterned dielectric layer are removed. An epitaxial layer is grown on the substrate and the first doped region and second doped region are driven into said epitaxial layer to form respective first and second n-type buried layers, then active devices are formed in the epitaxial layer.

Abstract: A method includes: growing a oxide layer on a topside of a semiconductor wafer using a local oxidation of silicon (LOCOS) process; forming a photoresist pattern with an alignment opening on the oxide layer; etching the oxide layer to form a trench in the oxide layer; etching an alignment mark trench into the exposed surface of the semiconductor wafer; depositing a dielectric layer that is one of a silicon nitride material or a silicon oxynitride material; performing an anisotropic plasma etch to remove the dielectric layer from horizontal surfaces on the oxide layer and the alignment mark trench and to form sidewalls from the dielectric layer on vertical sidewalls of the alignment mark trench; growing an alignment mark oxide layer on a bottom surface of the alignment trench; and etching and removing the oxide layer and the alignment mark oxide layer.

Abstract: A method for semiconductor processing is provided wherein a workpiece having an underlying body and a plurality of features extending therefrom, is provided. A first set of the plurality of features extend from the underlying body to a first plane, and a second set of the plurality features extend from the underlying body to a second plane. A protection layer overlies each of the plurality of features and an isolation layer overlies the underlying body and protection layer, wherein the isolation has a non-uniform first oxide density associated therewith. The isolation layer anisotropically etched based on a predetermined pattern, and then isotropically etched, wherein a second oxide density of the isolation layer is substantially uniform across the workpiece. The predetermined pattern is based, at least in part, on a desired oxide density, a location and extension of the plurality of features to the first and second planes.

Abstract: A method for semiconductor processing is provided wherein a workpiece having an underlying body and a plurality of features extending therefrom, is provided. A first set of the plurality of features extend from the underlying body to a first plane, and a second set of the plurality features extend from the underlying body to a second plane. A protection layer overlies each of the plurality of features and an isolation layer overlies the underlying body and protection layer, wherein the isolation has a non-uniform first oxide density associated therewith. The isolation layer anisotropically etched based on a predetermined pattern, and then isotropically etched, wherein a second oxide density of the isolation layer is substantially uniform across the workpiece. The predetermined pattern is based, at least in part, on a desired oxide density, a location and extension of the plurality of features to the first and second planes.

Abstract: One embodiment of the present invention relates to a capacitor. The capacitor includes a first electrode and a capacitor dielectric layer along-side the first capacitor electrode. A second electrode is found along-side the capacitor dielectric layer includes a number of inter-layers that are configured to prevent defects in the second capacitor electrode. Other methods and devices are also disclosed.