Abstract: A memory assist apparatus includes a detection circuit and a compensation circuit. The detection circuit is configured to provide a detection signal indicating whether a bit line configured to provide read access to a data bit stored at a memory bit cell has a voltage below a predetermined threshold. The compensation circuit is configured to pull down the voltage of the bit line if the detection signal indicates that the voltage of the bit line is below the predetermined threshold.

Abstract: Apparatus and methods for providing a high density memory array with reduced read access time are disclosed. Multiple split bit lines are arranged along columns of adjacent memory bit cells. A multiple input sense amplifier is coupled to the multiple split bit lines. The loading on the multiple split bit line is reduced, and the corresponding read speed of the memory array is enhanced over the prior art. The sense amplifier and the memory bit cells have a common cell pitch layout height so that no silicon area penalty arises due to the use of the multiple split bit lines and sense amplifiers. Increased memory array efficiency is achieved.

Abstract: A memory assist apparatus includes a detection circuit and a compensation circuit. The detection circuit is configured to provide a detection signal indicating whether a bit line configured to provide read access to a data bit stored at a memory bit cell has a voltage below a predetermined threshold. The compensation circuit is configured to pull down the voltage of the bit line if the detection signal indicates that the voltage of the bit line is below the predetermined threshold.

Abstract: A memory assist apparatus includes a detection circuit and a compensation circuit. The detection circuit is configured to provide a detection signal indicating whether a bit line configured to provide read access to a data bit stored at a memory bit cell has a voltage below a predetermined threshold. The compensation circuit is configured to pull down the voltage of the bit line if the detection signal indicates that the voltage of the bit line is below the predetermined threshold.

Abstract: In at least one embodiment, a multiplexer has a plurality of sub-circuits, and each of the plurality of sub-circuits has a first transistor, a second transistor, and a third transistor. Drains of the first transistors are coupled with a first terminal of a fourth transistor, and drains of the second transistors are coupled with a second terminal of the fourth transistor. In at least one embodiment, a method of outputting data using the multiplexer includes turning on the second transistor of a selected one of the plurality of sub-circuits responsive to a clock signal and address information. The second transistor of a non-selected one of the plurality of sub-circuits is turned off. The fourth transistor is turned on responsive to the clock signal.

Abstract: A memory assist apparatus includes a detection circuit and a compensation circuit. The detection circuit is configured to provide a detection signal indicating whether a bit line configured to provide read access to a data bit stored at a memory bit cell has a voltage below a predetermined threshold. The compensation circuit is configured to pull down the voltage of the bit line if the detection signal indicates that the voltage of the bit line is below the predetermined threshold.

Abstract: A multiplexing circuit includes a plurality of first circuits and a second circuit coupled to outputs of the plurality of first circuits. A first circuit of the plurality of first circuits is configured to receive a first data line as a first input and a clock signal as a second input, and provide an output signal to a first circuit output. After the first circuit is selected for use, the clock signal, a first sub-circuit of the first circuit coupled to the second circuit, and the second circuit are configured to provide a first output logic level to the output signal based on a first data logic level of the first data line; and a second sub-circuit of the first circuit coupled to the first circuit output is configured to provide a second output logic level to the output signal based on a second data logic level of the first data line.

Abstract: A multiplexing circuit includes a plurality of first circuits and a second circuit coupled to outputs of the plurality of first circuits. A first circuit of the plurality of first circuits is configured to receive a first data line as a first input and a clock signal as a second input, and provide an output signal to a first circuit output. After the first circuit is selected for use, the clock signal, a first sub-circuit of the first circuit coupled to the second circuit, and the second circuit are configured to provide a first output logic level to the output signal based on a first data logic level of the first data line; and a second sub-circuit of the first circuit coupled to the first circuit output is configured to provide a second output logic level to the output signal based on a second data logic level of the first data line.

Abstract: Apparatus and methods for providing a high density memory array with reduced read access time are disclosed. Multiple split bit lines are arranged along columns of adjacent memory bit cells. A multiple input sense amplifier is coupled to the multiple split bit lines. The loading on the multiple split bit line is reduced, and the corresponding read speed of the memory array is enhanced over the prior art. The sense amplifier and the memory bit cells have a common cell pitch layout height so that no silicon area penalty arises due to the use of the multiple split bit lines and sense amplifiers. Increased memory array efficiency is achieved.