Abstract: Embodiments of this application disclose a random access method. A base station determines that a detected first preamble value is a preamble value from a target terminal. The base station calculates a preamble offset and a time offset of the target terminal. The base station generates at least two random access response messages, where at least one of the at least two random access response messages includes a second preamble value and a second timing advance TA value, and at least one of the at least two random access response messages includes a third preamble value and a third TA value. The base station sends the at least two random access response messages to the target terminal.

Abstract: A random access method, base station, and terminal, where a base station detects a first preamble value, and generates at least two random access response messages based on the first preamble value. At least one random access response message includes a second preamble value, and at least one random access response message includes a third preamble value, where the second preamble value is the same as the first preamble value, and the third preamble value is a preamble value obtained after the base station adds a preset accumulation number to the first preamble value. The base station then sends the at least two random access response messages to a terminal.

Abstract: A random access method, base station, and terminal, where a base station detects a first preamble value, and generates at least two random access response messages based on the first preamble value. At least one random access response message includes a second preamble value, and at least one random access response message includes a third preamble value, where the second preamble value is the same as the first preamble value, and the third preamble value is a preamble value obtained after the base station adds a preset accumulation number to the first preamble value. The base station then sends the at least two random access response messages to a terminal.

Abstract: Embodiments of this application disclose a random access method. A base station determines that a detected first preamble value is a preamble value from a target terminal. The base station calculates a preamble offset and a time offset of the target terminal. The base station generates at least two random access response messages, where at least one of the at least two random access response messages includes a second preamble value and a second timing advance TA value, and at least one of the at least two random access response messages includes a third preamble value and a third TA value. The base station sends the at least two random access response messages to the target terminal.

Abstract: A composition for preparing a halogen-free resin is provided, the composition including a halogen-free phosphorated epoxy, a urethane-modified copolyester, a curing agent, a filler, a surfactant, and a solvent. A halogen-free prepreg is also provided, including a glass fabric cloth and a halogen-free resin layer on the glass fabric. The halogen-free resin layer is made from the foregoing halogen-free resin.

Abstract: A varnish includes resin and composite curing agent. The composite curing agent includes curing agent of polyphenylene methylphosphonate resin and curing agent of phenol resin. Glass fabric cloth is dipped into the varnish so as to form a prepreg with better thermal stability, anti-flammability, and low absorbent ability. Furthermore, the composite curing agent can be provided for higher curing rate.

Abstract: A composition for preparing a resin is provided. The composition includes a brominated epoxy resin, a urethane-modified copolyester, a curing agent and a solvent. A prepreg is also provided. The prepreg includes a glass fabric and a resin layer on the glass fabric. The resin layer is made from the foregoing resin.

Abstract: A varnish includes resin and composite curing agent. The composite curing agent includes curing agent of polyphenylene methylphosphonate resin and curing agent of phenol resin. Glass fabric cloth is dipped into the varnish so as to form a prepreg with better thermal stability, anti-flammability, and low absorbent ability. Furthermore, the composite curing agent can be provided for higher curing rate.

Abstract: A composition for preparing a resin is provided. The composition includes a brominated epoxy resin, a urethane-modified copolyester, a curing agent and a solvent. A prepreg is also provided. The prepreg includes a glass fabric and a resin layer on the glass fabric. The resin layer is made from the foregoing resin.

Abstract: A composition for preparing a halogen-free resin is provided, the composition including a halogen-free phosphorated epoxy, a urethane-modified copolyester, a curing agent, a filler, a surfactant, and a solvent. A halogen-free prepreg is also provided, including a glass fabric cloth and a halogen-free resin layer on the glass fabric. The halogen-free resin layer is made from the foregoing halogen-free resin.

Abstract: A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: wherein R1 is H, C1-C4 alkyl, or CF3; Q is C4-C12 cycloalkyl; R2 is H, C1-C4 alkyl, or CF3; R3 is C4-C12 branched or cyclic alkyl; and x+y+z equals to 1. The chemically-amplified resist compositions of the present invention not only can be applied maturely to general lithographic processes, especially to 193 nm lithographic process, but also have excellent photo-sensitivity, and can form a well-resolved pattern and profile.

Abstract: A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: 1