Abstract: A liquid fragrance dispenser comprising a dispensing device and a refill bottle configured to store liquid fragrance, wherein the refill bottle comprises a body configured to form a reservoir to store the liquid fragrance and a spray head configured to moved relative to the body to activate a spray mechanism comprising a pump to dispense liquid from the reservoir; the dispensing device comprises a motor configured to move the spray head downwards to activate the pump to move the liquid fragrance from the reservoir and dispense the liquid fragrance from the spray head; the dispensing device further comprises a low voltage detector configured to determine whether a voltage is below a threshold value; and the dispensing device is configured to stop dispensing the liquid fragrance when the low voltage detector determines that the voltage is below the threshold value.

Abstract: A memory device includes a memory array and a peripheral circuit which are stacked together, wherein the memory array includes a plurality of memory banks, the memory bank includes a plurality of memory blocks. The peripheral circuit includes a plurality of bit line sense amplifiers and a first driving circuit connected to the plurality of bit line sense amplifiers, wherein the first driving circuit includes a first sub circuit and at least one second sub circuit, wherein the first sub circuit includes a first level shifter, the second sub circuit includes a first inverter, and the second sub circuit overlaps with a memory block of the plurality of memory blocks in a stacking direction.

Abstract: Examples of the present disclosure provide a semiconductor device, a manufacturing method thereof, and a memory system, where the semiconductor device includes: a first semiconductor structure including a first bonding layer, a peripheral circuit layer including a logic circuit, and an interconnection layer; a second semiconductor structure including a memory array layer including DRAM memory cells and a second bonding layer; the second bonding layer being bonded to the first bonding layer; where the first semiconductor structure further includes: a first interconnection structure between the logic circuit and the first bonding layer; a contact structure penetrating through a semiconductor layer where the logic circuit is located; and a second interconnection structure and a pad in the interconnection layer; the logic circuit being connected to the pad through the first interconnection structure, the contact structure, and the second interconnection structure.

Abstract: Methods, devices, and systems for managing layouts of semiconductor structures in memory devices are provided. In one aspect, a memory device includes a first semiconductor including a first memory bank and a second memory bank, and a second semiconductor structure. The second semiconductor structure includes a first bank circuit and a second bank circuit arranged along a first direction. The first bank circuit is coupled to the first memory bank and the second bank circuit is coupled to the second memory bank. The first bank circuit includes a first driver circuit on a boundary of the first bank circuit, and the second bank circuit includes a second driver circuit on a boundary of the second bank circuit. At least a portion of the first driver circuit is adjacent to and overlaps with at least a portion of the second driver circuit along a second direction perpendicular to the first direction.

Abstract: A memory apparatus is provided. The memory apparatus may include a first semiconductor structure including a memory cell array and a first bonding layer, the memory cell array including memory banks arranged in two rows along a first direction, and a first region disposed between the two rows of memory banks in a second direction intersecting with the first direction; and a second semiconductor structure including a peripheral circuit and a second bonding layer, the peripheral circuit including a first peripheral region and second peripheral regions, and a circuit of the first peripheral region at least partially different from that of the second peripheral region, wherein the first peripheral region at least partially corresponds to the first region in the third direction, and one of the second peripheral regions at least partially corresponds to one of the memory banks in the third direction.

Abstract: The present disclosure provides a memory device and a manufacturing method thereof, and a memory system. The memory device comprises: a first semiconductor structure comprising a memory cell array, a first interconnection layer and a first bonding layer in contact with the first interconnection layer; a second semiconductor structure comprising a second interconnection layer and a second bonding layer; and first connection structures; wherein the memory cell array is located in the first semiconductor structure, the first interconnection layer comprises first power lines, and the first power line is at least partially located in the first semiconductor structure; and the second interconnection layer comprises second power lines; the first connection structure extends through the first bonding layer and the second bonding layer and connects with the first power line and the second power line.

Abstract: Disclosed is a method for pretreating Ranitidine hydrochloride sample, comprising steps: S1, weighing the Ranitidine hydrochloride sample containing an impurity of N-nitrosodimethylamine; S2, preparing a test solution of Ranitidine hydrochloride so that the concentration of N-nitrosodimethylamine in the test solution reaches the detection limit of high-performance liquid chromatography; S3, adding an alkaline solution to the Ranitidine hydrochloride test solution, wherein the alkaline solution reacts completely with hydrochloric acid in Ranitidine hydrochloride to give a Ranitidine neutralizing solution; S4, adding a silver ion solution to the Ranitidine neutralizing solution, and silver ions undergo a complete complexation reaction with secondary amino groups in Ranitidine to generate a precipitate.

Abstract: The present invention relates to a candle which includes a base unit and a candle body which is mounted to the base unit. The candle body includes a wick and a fibre optic running therethrough. The base unit includes a light sensor configured to detect light from the wick, when lit. There is additionally provided a light source configured to operate in dependence on detection of light by the light sensor.

Abstract: The present application discloses a surface treatment method of a polymer for 5G, belonging to the technical field of surface treatment of polymer. By injecting and adding the oxygen elements to the polymer, the polymer matrix elements and the injected atoms can form a blend structure, which can increase the surface roughness of the polymer, improve its bonding strength with the metal, and thus enhance its anti-peel strength. The surface treatment method of the application has the surface resistivity, surface roughness, water absorption and tensile properties of the polymer all considered. The equipment used in the invention has long service life and low cost, and can realize large-scale roll-to-roll production. The method can be popularized in polymer surface treatment.

Abstract: The present invention relates to a candle which includes a base unit and a candle body which is mounted to the base unit. The candle body includes a wick and a fibre optic running therethrough. The base unit includes a light sensor configured to detect light from the wick, when lit. There is additionally provided a light source configured to operate in dependence on detection of light by the light sensor.

Abstract: Disclosed is a method for pretreating Ranitidine hydrochloride sample, comprising steps: S1, weighing the Ranitidine hydrochloride sample containing an impurity of N-nitrosodimethylamine; S2, preparing a test solution of Ranitidine hydrochloride so that the concentration of N-nitrosodimethylamine in the test solution reaches the detection limit of high-performance liquid chromatography; S3, adding an alkaline solution to the Ranitidine hydrochloride test solution, wherein the alkaline solution reacts completely with hydrochloric acid in Ranitidine hydrochloride to give a Ranitidine neutralizing solution; S4, adding a silver ion solution to the Ranitidine neutralizing solution, and silver ions undergo a complete complexation reaction with secondary amino groups in Ranitidine to generate a precipitate.