Patents by Inventor Bin XIN

Bin XIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12120962
    Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.
    Type: Grant
    Filed: November 8, 2023
    Date of Patent: October 15, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tai-Cheng Hou, Fu-Yu Tsai, Bin-Siang Tsai, Da-Jun Lin, Chau-Chung Hou, Wei-Xin Gao
  • Patent number: 12099346
    Abstract: Disclosed is a large-scale dynamic double-effect scheduling method for a flexible job shop based on genetic programming (GP). In a GP implementation process of the present disclosure, in addition to features related to workpieces, processing robots and automated guided vehicles (AGVs), such as processing time of working procedures and buffer area waiting time, features of a ratio of processing time to transfer time and a ratio of processing energy consumption to transfer energy consumption are also added in a terminal set to cause job shop environment features to be more comprehensively applied to a scheduling rule design, thereby automatically designing a more consistent and accurate scheduling rule. A double-effect scheduling rule of the present disclosure overcomes the shortcomings of slow convergence speed, difficulty in rapid corresponding changes and unfit scheduling rules, and can quickly produce a more efficient and energy-saving production scheduling scheme.
    Type: Grant
    Filed: April 28, 2024
    Date of Patent: September 24, 2024
    Assignee: Beijing Institute of Technology
    Inventors: Bin Xin, Yingmei He, Sai Lu, Fang Deng, Qing Wang, Mengjie Jing, Jiwei He
  • Patent number: 12071683
    Abstract: The present disclosure relates to a clamping device configured to clamp a substrate. The clamping device includes a clamping plate and a flattening mechanism. The flattening mechanism includes at least one adjusting member configured to operably act on the clamping plate to apply a force to the clamping plate to flatten the clamping plate.
    Type: Grant
    Filed: November 30, 2021
    Date of Patent: August 27, 2024
    Assignee: KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD.
    Inventors: Haitao Chen, Qiangqiang Li, Bin Xue, Xiaogang Xin, Fei Sun, Zaifeng Qiu
  • Publication number: 20240249555
    Abstract: A method for detecting a human behavior includes: obtaining an image to be detected; obtaining a plurality of key points and a plurality of pieces of position information respectively corresponding to the plurality of key points by key-point recognition on the image to be detected; grouping the plurality of key points based on the plurality of pieces of position information to obtain a plurality of key-point groups, the plurality of key-point groups at least including a part of the plurality of key points; and determining a target human behavior based on key points in the plurality of key-point groups.
    Type: Application
    Filed: April 20, 2022
    Publication date: July 25, 2024
    Applicant: BEIJING BAIDU NETCOM SCIENCE TECHNOLOGY CO., LTD.
    Inventors: Song Xue, Yuan Feng, Ying Xin, Bin Zhang, Chao Li, Xiaodi Wang, Yunhao Wang, Yi Gu, Xiang Long, Honghui Zheng, Yan Peng, Zhuang Jia, Shumin Han
  • Patent number: 12005445
    Abstract: A method for making ion-crystal semiconductor material based micro- and/or nanowires, MNWs, embedded into a semiconductor substrate, includes forming a structure into the semiconductor substrate, wherein the structure has each of a width and a depth less than 10 ?m; pumping an ion-crystal semiconductor material as an ion solution into the structure, wherein the pumping is achieved exclusively due to capillary forces; flowing the ion solution through the structure to fill the structure; crystallizing the ion-crystal semiconductor material inside the structure to form the MNWs; and adding electrodes to ends of the MNWs.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: June 11, 2024
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Bin Xin, Iman S. Roqan
  • Patent number: 11824132
    Abstract: An X-ray system includes an X-ray generation unit configured to generate X-rays; an X-ray detection unit including at least one X-ray sensor that includes an indirect bandgap, perovskite semiconductor material, the X-ray sensor being configured to record the X-rays; and a control unit that controls a generation of the X-rays and a detection of the X-rays at the X-ray detection unit.
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: November 21, 2023
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Bin Xin, Iman S. Roqan
  • Publication number: 20230229172
    Abstract: A multi-robot collaboration method in a flexible hardware production workshop is provided, by which allocation of workpiece machining tasks and transfer of workpieces in different workstations can be achieved and meanwhile relatively high calculation cost is avoided. According to the method, a distributed collaboration method is fully used, and in allusion to the current technical condition, the allocation of the workpiece machining tasks and the transfer of the workpieces in different workstations can be achieved and meanwhile the relatively high calculation cost is avoided. A multi-AGV path conflict eliminating method is used for avoiding possible collision of AGVs during movement. A centralized intervention and adjustment method is used for discovering and predicting system conflicts and failure problems and making timely dispatching and adjustment so as to improve the automation level and the flexibility level of a hardware workshop.
    Type: Application
    Filed: January 17, 2023
    Publication date: July 20, 2023
    Inventors: Bin XIN, Sai LU, Lihua DOU, Jie CHEN, Qing WANG, Miao WANG
  • Publication number: 20220190182
    Abstract: An X-ray system includes an X-ray generation unit configured to generate X-rays; an X-ray detection unit including at least one X-ray sensor that includes an indirect bandgap, perovskite semiconductor material, the X-ray sensor being configured to record the X-rays; and a control unit that controls a generation of the X-rays and a detection of the X-rays at the X-ray detection unit.
    Type: Application
    Filed: April 23, 2020
    Publication date: June 16, 2022
    Inventors: Bin XIN, Iman S. ROQAN
  • Publication number: 20210354136
    Abstract: A method for making ion-crystal semiconductor material based micro- and/or nanowires, MNWs, embedded into a semiconductor substrate, includes forming a structure into the semiconductor substrate, wherein the structure has each of a width and a depth less than 10 ?m; pumping an ion-crystal semiconductor material as an ion solution into the structure, wherein the pumping is achieved exclusively due to capillary forces; flowing the ion solution through the structure to fill the structure; crystallizing the ion-crystal semiconductor material inside the structure to form the MNWs; and adding electrodes to ends of the MNWs.
    Type: Application
    Filed: May 18, 2021
    Publication date: November 18, 2021
    Inventors: Bin XIN, Iman S. ROQAN
  • Publication number: 20210340021
    Abstract: A method for forming CsPbBr3 perovskite nanocrystals into a two-dimensional (2D) nanosheet includes providing CsPbBr3 perovskite nanocrystals; mixing the CsPbBr3 perovskite nanocrystals into a mixture of a first solvent and a second solvent, to form a solution of the CsPbBr3 perovskite nanocrystals, the first solvent, and the second solvent; and forming an optoelectronic device by patterning the CsPbBr3 perovskite nanocrystals into a nanosheet, between first and second electrodes. The first solvent is selected to evaporate before the second solvent.
    Type: Application
    Filed: September 5, 2019
    Publication date: November 4, 2021
    Inventors: Bin XIN, Iman ROQAN, Yuhai ZHANG, Somak MITRA, Yusin PAK