Abstract: The present invention provides a display panel and a display device; the display panel comprises a TFT substrate, a color filter substrate and a conductive polarizer; the conductive polarizer covers a light radiation surface of the color filter substrate, a side perpendicular to the light radiation surface, and a side of the TFT substrate. The display panel can avoid influence of outside electric fields, and has a certain tap or drop ability.

Abstract: A sound masking device includes: a sound pick-up unit which picks up a sound, and which produces a picked-up sound signal based on the sound, a masking sound signal producing unit which produces a masking sound signal from the picked-up sound signal a sound emitting unit which emits a masking sound based on the masking sound signal, and an echo cancelling unit which performs an echo cancelling process on the picked-up sound signal by performing an adaptive filtering process on the masking sound signal, and by subtracting the filtered masking sound signal from the picked-up sound signal. The masking sound signal producing unit produces a masking sound signal having a level corresponding to an amplitude level of the picked-up sound signal which has subjected to the echo cancelling process.

Abstract: A method of performing gamma correction for LCD panels includes: dividing the display area of a LCD panel to form n sub-areas of the display area; dividing all grey-scale images into n sets to form n sets of grey-scale images; displaying a first chosen grey-scale image of each set of grey-scale images on the corresponding sub-area of n sub-areas concurrently; detecting the brightness of the first chosen grey-scale image with a photosensor installed on the sub-area; examining if there is grey-scale image pending for detection in the set of grey scale images; extracting a gamma curve of the LCD panel; and correcting the gamma curve of the LCD panel.

Abstract: A method and apparatus for grayscale adjustment are provided. The method includes steps of: obtaining pixel grayscale values or at least one region grayscale value of an original image; selecting a predetermined grayscale compensation interval, from multiple predetermined grayscale compensation intervals, which corresponds to the pixel grayscale values or the region grayscale value as a ready-to-use grayscale compensation interval; obtaining a grayscale compensation value which corresponds to the ready-to-use grayscale compensation interval; and performing compensation on pixel grayscale values of the original image according to the grayscale compensation value.

Abstract: A capacitive acceleration sensor with an “H”-shaped beam and a preparation method. The sensor at least includes: a first electrode structural layer, a middle structural layer and a second electrode structural layer; the first electrode structural layer and the second electrode structural layer are provided with electrode lead via holes, respectively; the middle structural layer includes: a frame formed at SOI silicon substrate having a double device layer, a seismic mass whose double sides are symmetrical, and an “H”-shaped elastic beam whose double sides are symmetrical, with one end connected to the frame and the other end connected to the seismic mass, there are anti-overloading bumps and damping grooves symmetrically provided on the two sides of the seismic mass, and the “H”-shaped elastic beam and a bulk silicon layer of the oxygen containing silicon substrate satisfy the requirements therebetween: ?{square root over (2)}(a+b+c)<h, ?{square root over (2)}d<h.

Abstract: A three-dimensional thermoelectric energy harvester and a fabrication method thereof. Low-resistivity silicon is etched to form a plurality of grooves and silicon columns between the grooves, and an insulating layer is formed on a surface of the groove, and thermoelectric columns are fabricated by using a thin-film deposition technique, so that the thermoelectric column and a neighboring silicon column form a thermocouple pair; and then, a metal wiring is fabricated by processes such as etching and deposition, followed by thinning of the substrate and bonding of the supporting substrates, thereby completing fabrication of the three-dimensional thermoelectric energy harvester. Fabrication of the thermocouple pair structure by one thin-film deposition process simplifies the fabrication process. The thermocouple pair using silicon ensures a high Seebeck coefficient. The use of vertical thermocouple pairs having a column structure improves the mechanical stability of the thermoelectric energy harvester.

Abstract: A capacitive acceleration sensor with an “H”-shaped beam and a preparation method. The sensor at least includes: a first electrode structural layer, a middle structural layer and a second electrode structural layer; the first electrode structural layer and the second electrode structural layer are provided with electrode lead via holes, respectively; the middle structural layer includes: a frame formed at SOI silicon substrate having a double device layer, a seismic mass whose double sides are symmetrical, and an “H”-shaped elastic beam whose double sides are symmetrical, with one end connected to the frame and the other end connected to the seismic mass, there are anti-overloading bumps and damping grooves symmetrically provided on the two sides of the seismic mass, and the “H”-shaped elastic beam and a bulk silicon layer of the oxygen containing silicon substrate satisfy the requirements therebetween: ?{square root over (2)}(a+b+c)<h, ?{square root over (2)}d<h.

Abstract: A miniature thermoelectric energy harvester and a fabrication method thereof. Annular grooves are fabricated on a low-resistivity silicon substrate to define silicon thermoelectric columns, an insulating layer is fabricated on the annular grooves, a thermoelectric material is filled in the annular grooves to form annular thermoelectric columns, and then metal wirings, passivation layers and supporting substrates are fabricated, thereby completing the fabrication process. The silicon thermoelectric column using a silicon base material simplifies the fabrication process. The fabrication of the thermocouple structure is one thin-film deposition process, which simplifies the process. The use of silicon as a component of the thermocouple has a high Seebeck coefficient. The use of vertical thermocouples improves the stability. Since the thermocouple structure is bonded to the upper supporting substrate and lower supporting substrate by wafer-level bonding, the fabrication efficiency is improved.

Abstract: A sound masking device includes: a sound pick-up unit which picks up a sound, and which produces a picked-up sound signal based on the sound, a masking sound signal producing unit which produces a masking sound signal from the picked-up sound signal a sound emitting unit which emits a masking sound based on the masking sound signal, and an echo cancelling unit which performs an echo cancelling process on the picked-up sound signal by performing an adaptive filtering process on the masking sound signal, and by subtracting the filtered masking sound signal from the picked-up sound signal. The masking sound signal producing unit produces a masking sound signal having a level corresponding to an amplitude level of the picked-up sound signal which has subjected to the echo cancelling process.

Abstract: A stereoscopic screen, including a control device and a display screen. The display screen includes a plurality of light-emitting pixels controlled by the control device. Each of the light-emitting pixels is provided with a cylindrical lens, by which forming a difference between the visual images perceived by a left eye and a right eye according to a light-emitting principle of the cylindrical lens. The light-emitting pixel is in the form of a cylindrical light-emitting tube or a surface mounted device (SMD). The cylindrical light-emitting tube includes the cylindrical lens, a capsule, a pin, and a light-emitting chip. The light-emitting chip is disposed inside the capsule. The cylindrical lens is disposed on the capsule. The pin is connected to the light-emitting chip. The SMD includes the cylindrical lens and the capsule, or a cylindrical cover is arranged on a light-emitting surface of the capsule of the SMD.

Abstract: A three-dimensional thermoelectric energy harvester and a fabrication method thereof. Low-resistivity silicon is etched to form a plurality of grooves and silicon columns between the grooves, and an insulating layer is formed on a surface of the groove, and thermoelectric columns are fabricated by using a thin-film deposition technique, so that the thermoelectric column and a neighboring silicon column form a thermocouple pair; and then, a metal wiring is fabricated by processes such as etching and deposition, followed by thinning of the substrate and bonding of the supporting substrates, thereby completing fabrication of the three-dimensional thermoelectric energy harvester. Fabrication of the thermocouple pair structure by one thin-film deposition process simplifies the fabrication process. The thermocouple pair using silicon ensures a high Seebeck coefficient. The use of vertical thermocouple pairs having a column structure improves the mechanical stability of the thermoelectric energy harvester.

Abstract: A miniature thermoelectric energy harvester and a fabrication method thereof Annular grooves are fabricated on a low-resistivity silicon substrate to define silicon thermoelectric columns, an insulating layer is fabricated on the annular grooves, a thermoelectric material is filled in the annular grooves to form annular thermoelectric columns, and then metal wirings, passivation layers and supporting substrates are fabricated, thereby completing the fabrication process. The silicon thermoelectric column using a silicon base material simplifies the fabrication process. The fabrication of the thermocouple structure is one thin-film deposition process, which simplifies the process. The use of silicon as a component of the thermocouple has a high Seebeck coefficient. The use of vertical thermocouples improves the stability. Since the thermocouple structure is bonded to the upper supporting substrate and lower supporting substrate by wafer-level bonding, the fabrication efficiency is improved.

Abstract: A bandwidth configuration method includes: A terminal acquires that a narrow bandwidth mode is used at a network side by a downlink transmission signal and/or an uplink transmission signal; and the terminal configures a receiving bandwidth and/or a transmitting bandwidth, where the receiving bandwidth and/or the transmitting bandwidth corresponds to the narrow bandwidth mode at the network side. The terminal side can acquire whether the network side uses the narrow bandwidth technology, and automatically adjust a bandwidth of a corresponding channel at the terminal side when the network side uses the narrow bandwidth technology, so that intra-system performance loss and inter-system interference that are caused by different bandwidth modes between the terminal side and the network side are avoided, thus improving performance of a communication system.

Abstract: A cover latching assembly includes a housing, a releasing assembly and a cover. The housing includes an upper board, a side board extending from the upper board and an assembling portion disposed on the upper board communicating with the side board through a hole. The cover is detachably mounted on the housing and includes an upper wall and a peripheral wall. The peripheral wall has a notch defined therethrough corresponding to the hole; the upper wall has a latching hook formed thereon adjacent to the notch. The releasing assembly is releasably assembled within the accommodating portion of the housing through the hole and partially accommodated within the hole for releasably latching with the latching hook of the cover.

Abstract: A bandwidth configuration method includes: A terminal acquires that a narrow bandwidth mode is used at a network side by a downlink transmission signal and/or an uplink transmission signal; and the terminal configures a receiving bandwidth and/or a transmitting bandwidth, where the receiving bandwidth and/or the transmitting bandwidth corresponds to the narrow bandwidth mode at the network side. The terminal side can acquire whether the network side uses the narrow bandwidth technology, and automatically adjust a bandwidth of a corresponding channel at the terminal side when the network side uses the narrow bandwidth technology, so that intra-system performance loss and inter-system interference that are caused by different bandwidth modes between the terminal side and the network side are avoided, thus improving performance of a communication system.

Abstract: The invention relates to a series of profile configurations for retractable banner display devices. A top arcuate profile and a bottom flat profile form an elongated housing having an opening which enable a banner to be extended and displayed at forefront of the almost entire physical structure of said display device without the need of other stabilising requirements. At least one connection body profile integrates with top arcuate profile(s) and bottom flat profile(s) forming structures of said display device for a single or a double-sided banner display. The profile configuration enable easy assembly and maintenance for the said display device by means of a connecting method between a bottom flat profile and a connecting body profile, that said bottom flat profile can be easily removed and replaced while the structure of the said display device sustains.

Abstract: A cover mechanism for an electronic device includes a protective cover and a resisting member. The protective cover includes a cover portion, and an arm portion. The arm portion allows the protective cover to rotate relative to the electronic device. The resisting member is attached to the electronic device, and prevents the arm portion from separating from the electronic device.

Abstract: A cover mechanism for an electronic device includes a protective cover and a resisting member. The protective cover includes a cover portion, and an arm portion. The arm portion allows the protective cover to rotate relative to the electronic device. The resisting member is attached to the electronic device, and prevents the arm portion from separating from the electronic device.

Abstract: A cover latching assembly includes a housing, a releasing assembly and a cover. The housing includes an upper board, a side board extending from the upper board and an assembling portion disposed on the upper board communicating with the side board through a hole. The cover is detachably mounted on the housing and includes an upper wall and a peripheral wall. The peripheral wall has a notch defined therethrough corresponding to the hole; the upper wall has a latching hook formed thereon adjacent to the notch. The releasing assembly is releasably assembled within the accommodating portion of the housing through the hole and partially accommodated within the hole for releasably latching with the latching hook of the cover.

Abstract: The present invention provides a Computer Supported Telecommunications Applications (CSTA) protocol-based service delivery method, which includes: obtaining a switching function service that carries voice parameters; and sending the switching function service that carries voice parameters down to the switch side. The present invention also provides a CSTA-based service execution method, a Personal Computer (PC), a switch, and a voice service system. In the present invention, when the PC sends a switching function service to the switch, voice parameters can be carried in the switching function service. In this way, when the switch obtains the switching function service with voice parameters, the switch can play voice according to the voice parameters. Therefore, the present invention enables play of voice without modifying the existing service process, thus, simplifying the implementation.