Patents by Inventor Bin-Yuan Hung

Bin-Yuan Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8564103
    Abstract: In order to protect IMD layers, particularly low-k dielectrics, a protection film is formed on the sidewall of an opening in the IMD layers prior to etching a trench in the underlying silicon substrate. After etching the trench, such as through a TMAH wet etch, at least part of the protection film can be removed. The protection film can be removed in an anisotropic etch process such that a portion of the protection film remains as a sidewall spacer on the sidewall of the opening within the IMD layers.
    Type: Grant
    Filed: March 19, 2010
    Date of Patent: October 22, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Bin-Yuan Hung, Sung-Hui Huang, Wen Ting Tsai, Dian-Hau Chen, Ching Wei Hsieh
  • Publication number: 20100308444
    Abstract: In order to protect IMD layers, particularly low-k dielectrics, a protection film is formed on the sidewall of an opening in the IMD layers prior to etching a trench in the underlying silicon substrate. After etching the trench, such as through a TMAH wet etch, at least part of the protection film can be removed. The protection film can be removed in an anisotropic etch process such that a portion of the protection film remains as a sidewall spacer on the sidewall of the opening within the IMD layers.
    Type: Application
    Filed: March 19, 2010
    Publication date: December 9, 2010
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Bin-Yuan Hung, Sung-Hui Huang, Wen Ting Tsai, Dian-Hau Chen, Ching Wei Hsieh