Abstract: A cantilever beam structure where stress is matched and a method of manufacturing the same are provided. An example method may comprise depositing a first sub-layer of a first material with a first deposition menu and depositing a second sub-layer of the first material with a second deposition menu different from the first deposition menu. The first sub-layer and the second sub-layer can be disposed adjacent to each other to form a first layer. The method may further comprise depositing a second layer of a second material different from the first material. The first layer and the second layer can be disposed adjacent to each other. The method may further comprise matching stress between the first layer and the second layer by adjusting at least one of thicknesses of the respective sub-layers of the first layer and a thickness of the second layer.

Abstract: A cantilever beam structure where stress is matched and a method of manufacturing the same are provided. An example method may comprise depositing a first sub-layer of a first material with a first deposition menu and depositing a second sub-layer of the first material with a second deposition menu different from the first deposition menu. The first sub-layer and the second sub-layer can be disposed adjacent to each other to form a first layer. The method may further comprise depositing a second layer of a second material different from the first material. The first layer and the second layer can be disposed adjacent to each other. The method may further comprise matching stress between the first layer and the second layer by adjusting at least one of thicknesses of the respective sub-layers of the first layer and a thickness of the second layer.

Abstract: The present invention discloses a micrometer-scale grid structure based on single crystal silicon consists of periphery frame 1 and grid zone 2. The periphery frame 1 is rectangle, and grid zone 2 has a plurality of mesh-holes 3 distributing in the plane of grid zone 2. The present invention also provides a method for manufacturing a micrometer-scale grid structure based on single crystal silicon. According to the present invention thereof, the contradiction between demand of broad deformation space for sensor and actuator and the limit of the thickness of sacrifice layer is solved. Furthermore, the special requirement of double-side transparence for some optical sensor is met.

Abstract: The present invention discloses a micrometer-scale grid structure based on single crystal silicon consists of periphery frame 1 and grid zone 2. The periphery frame 1 is rectangle, and grid zone 2 has a plurality of mesh-holes 3 distributing in the plane of grid zone 2. The present invention also provides a method for manufacturing a micrometer-scale grid structure based on single crystal silicon. According to the present invention thereof, the contradiction between demand of broad deformation space for sensor and actuator and the limit of the thickness of sacrifice layer is solved. Furthermore, the special requirement of double-side transparence for some optical sensor is met.