Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: A toilet flushing method causes high-pressure flush water, provided by a flow pipe, to spray along the baffle in the bottom of the trap of a toilet bowl and causes the flush water used for washing the toilet bowl to spray into the toilet bowl. The high-pressure flush water discharges the egesta with water in order to supply sealing water to the trap. A toilet, which uses components for improving the prior art toilet, carries out the flushing method.