Patents by Inventor Bing-Lung Yu

Bing-Lung Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device and method of manufacturing the same
    Patent number: 9455404
    Abstract: A memory device is provided. A first conductive layer, a first diffusion barrier layer, a phase change layer, a second diffusion barrier layer and a second conductive layer are disposed on a first electrode layer in sequence to form a stacking structure. A dielectric layer is disposed on the first electrode layer and covers a sidewall of the stacking structure and part of a top surface of the second conductive layer. A second electrode layer is disposed on the dielectric layer and the second conductive layer. Barrier enhancing components are provided between a bottom surface of the first diffusion barrier layer and a top surface of the second diffusion barrier layer. Further, a method of manufacturing a memory device is provided.
    Type: Grant
    Filed: January 6, 2015
    Date of Patent: September 27, 2016
    Assignee: MACRONIX International Co., Ltd.
    Inventors: Bing-Lung Yu, Chin-Tsan Yeh
  • MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20160197272
    Abstract: A memory device is provided. A first conductive layer, a first diffusion barrier layer, a phase change layer, a second diffusion barrier layer and a second conductive layer are disposed on a first electrode layer in sequence to form a stacking structure. A dielectric layer is disposed on the first electrode layer and covers a sidewall of the stacking structure and part of a top surface of the second conductive layer. A second electrode layer is disposed on the dielectric layer and the second conductive layer. Barrier enhancing components are provided between a bottom surface of the first diffusion barrier layer and a top surface of the second diffusion barrier layer. Further, a method of manufacturing a memory device is provided.
    Type: Application
    Filed: January 6, 2015
    Publication date: July 7, 2016
    Inventors: Bing-Lung Yu, Chin-Tsan Yeh
  • Semiconductor structure and method for manufacturing the same
    Patent number: 9252102
    Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a conductive layer, a via, and a barrier layer disposed between the conductive layer and the via. The barrier layer is stuffed with oxygen.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: February 2, 2016
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Bing-Lung Yu, Chin-Tsan Yeh, Yung-Tai Hung, Chin-Ta Su
  • SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20150357286
    Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a conductive layer, a via, and a barrier layer disposed between the conductive layer and the via. The barrier layer is stuffed with oxygen.
    Type: Application
    Filed: June 6, 2014
    Publication date: December 10, 2015
    Inventors: Bing-Lung Yu, Chin-Tsan Yeh, Yung-Tai Hung, Chin-Ta Su