Abstract: Provided are anti-CD276 antibodies, and anti-CD276/PD-L1 bispecific antibody molecules, isolated polynucleotides encoding the same, pharmaceutical compositions comprising the same, and the uses thereof.

Abstract: An online measurement device for crystal size and shape in a high-solid-content crystallization process includes a solution amplifier, a measurement device, a peristaltic pump, a crystallization kettle, a dilution device and a solution storage tank. A crystal-containing solution is arranged in the crystallization kettle; an inner wall of the solution amplifier is smooth, one end is an amplification end, and the other end is a contraction end. The contraction end is communicated with one end of the solution storage tank and one end of the crystallization kettle. The amplification end is communicated with the dilution device and the peristaltic pump. The peristaltic pump is communicated with the other end of the crystallization kettle. The solution amplifier, the peristaltic pump and the crystallization kettle form a complete passage through a pipeline. A measurement instrument of the measurement device is arranged at the outer side of the solution amplifier.

Abstract: The present application provides novel PRMT5 and/or MTA-cooperative PRMT5 inhibiting compounds, or pharmaceutically acceptable salts thereof. The present application also provides pharmaceutical compositions comprising one or more of the compounds, or pharmaceutically acceptable salts thereof as an active ingredient, and the use of the compounds, or pharmaceutically acceptable salts thereof in the treatment of diseases or disorders, including cancers.

Abstract: Flow cytometers including tilted beam shaping optical components are provided. In certain embodiments, the subject flow cytometers include a flow cell, a light source configured to produce a beam for irradiating particles in the flow cell at an interrogation point, and a tilted beam shaping optical component positioned between the light source and the flow cell. In such embodiments, the tilted beam shaping optical component is configured to generate beam ellipticity by creating astigmatism in the beam. In some embodiments, the tilted beam shaping optical component is a lens. In other embodiments, the tilted beam shaping optical component is a concave mirror. Methods of analyzing a sample using a flow cytometer including a tilted beam shaping optical component are also provided.

Abstract: Aspects of the disclosure include systems for irradiating a sample in a flow stream. Systems according to certain embodiments include a light propagator having a first fiber optic operably coupled to a first laser and configured to receive light from the first laser at a proximal end and to convey the laser light from a distal end to a first position on the flow stream and a second fiber optic operably coupled to a second laser and configured to receive light from the second laser at a proximal end and to convey the laser light from a distal end to a second position on the flow stream. Methods for irradiating a sample in a flow stream with the subject systems and detecting light from two or more positions on irradiated flow stream are also provided.

Abstract: A fan device and an electronic device thereof are disclosed. The fan device is disposed in a casing of the electronic device and adjacent to a board of the casing, wherein the board has a first state and a second state. The fan device includes a plurality of fan blades, a shaft, and a ball. The shaft is connected to the plurality of fan blades and allows the plurality of fan blades rotating with the shaft, wherein at least one end of the shaft has a ball accommodating portion and an opening. The ball is disposed in the ball accommodating portion and limited by the opening for not separate from the ball accommodating portion. When the board is in the first state, a gap is between the ball and the casing. When the board is in the second state, the board and the ball touch each other.

Abstract: A fixing mechanism for fixing an electronic component is disclosed in the present invention. The fixing mechanism includes a first casing, a boss disposed on the first casing. The electronic component is disposed on the boss. The fixing mechanism further includes a resilient component disposed on the boss and located between the first casing and the electronic component, a circuit board putting on the electronic component and fixed on the first casing, and a second casing pressing the circuit board and fixed on the first casing. The circuit board contacts against the electronic component tightly by an assembly of the first casing and the second casing.

Abstract: An improved pseudomorphic high electron mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT) integrated epitaxial structure, in which the structure comprises a substrate, a pHEMT structure, an etching-stop spacer layer, and an HBT structure. The pHEMT structure comprises a buffer layer, a bottom barrier layer, a first channel spacer layer, a channel layer, a second channel spacer layer, a Schottky spacer layer, a Schottky donor layer, a Schottky barrier layer, an etching-stop layer, and at least one cap layer. By introducing the first channel spacer layer and the second channel spacer layer to reduce the density of the dislocations and to reduce the compressive strain in the pseudomorphic channel layer.

Abstract: An improved pseudomorphic high electron mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT) integrated epitaxial structure and the fabrication method thereof, in which the structure comprises a substrate, a pHEMT structure, an etching-stop spacer layer, and an HBT structure. The pHEMT's structure comprises a buffer layer, a barrier layer, a first channel spacer layer, a channel layer, a second channel spacer layer, a Schottky barrier layer, an etching-stop layer, and at least one cap layer. The fabrication method of an HBT and a pHEMT are also included.

Abstract: A fixing mechanism for fixing an electronic component is disclosed in the present invention. The fixing mechanism includes a first casing, a boss disposed on the first casing. The electronic component is disposed on the boss. The fixing mechanism further includes a resilient component disposed on the boss and located between the first casing and the electronic component, a circuit board putting on the electronic component and fixed on the first casing, and a second casing pressing the circuit board and fixed on the first casing. The circuit board contacts against the electronic component tightly by an assembly of the first casing and the second casing.

Abstract: An oxidized low density lipoprotein sensing device for a gallium nitride process is a GaN HEMT device including: a gateless AlGaN/GaN sensing transistor device, a testing window, a source, a drain, two metal connecting wires and a passivation layer. The gateless AlGaN/GaN sensing transistor device has an epitaxial wafer structure including a GaN layer and an aluminum gallium nitride layer. The testing window is disposed on the epitaxial wafer structure. The metal connecting wire is disposed on a source and a drain. The passivation layer is covered onto a surface of the sensing device except the testing window. A built-in piezoelectric field is created by the properties of FET and the polarization effect of AlGaN/GaN to achieve the effect of sensing the level of oxidizing proteins in human body quickly, accurately and easily.

Abstract: The present invention describes a technique for achieving high peak power output in a laser employing single-stage, multi-pass amplification. High gain is achieved by employing a very small “seed” beam diameter in gain medium, and maintaining the small beam diameter for multiple high-gain pre-amplification passes through a pumped gain medium, then leading the beam out of the amplifier cavity, changing the beam diameter and sending it back to the amplifier cavity for additional, high-power amplification passes through the gain medium. In these power amplification passes, the beam diameter in gain medium is increased and carefully matched to the pump laser's beam diameter for high efficiency extraction of energy from the pumped gain medium. A method of “grooming” the beam by means of a far-field spatial filter in the process of changing the beam size within the single-stage amplifier is also described.

Abstract: The present invention describes a technique for achieving high peak power output in a laser employing single-stage, multi-pass amplification. High gain is achieved by employing a very small “seed” beam diameter in gain medium, and maintaining the small beam diameter for multiple high-gain pre-amplification passes through a pumped gain medium, then leading the beam out of the amplifier cavity, changing the beam diameter and sending it back to the amplifier cavity for additional, high-power amplification passes through the gain medium. In these power amplification passes, the beam diameter in gain medium is increased and carefully matched to the pump laser's beam diameter for high efficiency extraction of energy from the pumped gain medium. A method of “grooming” the beam by means of a far-field spatial filter in the process of changing the beam size within the single-stage amplifier is also described.

Abstract: An apparatus and method are provided for producing x-rays by generating high harmonic radiation with long wavelength light. The use of long wavelength light increases the acceleration time of the electrons in the light field. Keeping the atomic species and light intensity unchanged, the x-ray photon energy increases by a factor of two to four when the fundamental wavelength increases by a factor of two.

Abstract: The yield of crops (such as rice, wheat, corn, potato, soybean and other like major crops) can be increased according to a method wherein plants capable of yielding such crops are treated at a specific stage in their growing period with brassinolide, i.e. (2.alpha.,3.alpha.,22R,23R)-tetrahydroxy-24S-methyl-B-homo-7-oxa-5.alpha.