Abstract: A semiconductor structure for high voltage/high current MOS circuits is provided, including a deep N-well (NMD), a P-well (PW) disposed within NWD, a plurality of field oxide regions (FOX), a plurality of doping regions, including both N+ regions and P+ regions, disposed within NWD and PW, a gate (G) connected to a doping region, a bulk pad (B) connected to a doping regions, a source pad (S) connected to a doping regions and a drain pad (D) connected to a doping region. The top view of the present invention shows that the regions are of non-specific shapes and overlaid in a radial manner, with doping region connected to B being encompassed by doping region connected to S, which in turn encompassed by G, encompassed by FOX, encompassed by doping region connected to D.

Abstract: A lateral diffused metal-oxide-semiconductor field-effect transistor structure including a P substrate, an N+ buried layer, an N epitaxial layer, a P well, an N well, a drain region, a source region, and a body region is disclosed. The N+ buried layer is located between the P substrate and the N epitaxial layer, the P well contacts the N+ buried layer, the source region and the body region are located in the P well, the N well is located in the N epitaxial layer, and the drain region is located in the N well. When a high voltage is applied to the drain and the P substrate is grounded, a breakdown voltage with the P substrate is raised because of the N+ buried layer isolating the P substrate from the N epitaxial layer, so as to be able to avoid PN junction breakdown.