Patents by Inventor BING-YU XIA

BING-YU XIA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10844480
    Abstract: A method for making carbon nanotube film includes providing a growth substrate having a first surface and a second surface opposite to the first surface. A catalyst layer is placed on the first surface. The growth substrate and the catalyst layer are placed in a reaction chamber. The carbon source gas and hydrogen are supplied into the reaction chamber at a growth temperature of a plurality of carbon nanotubes. An electric field is applied to the growth substrate, wherein an electric field direction of the electric field is from the first surface to the second surface. After the plurality of carbon nanotubes fly away from the growth substrate, the electric field is stopped applying to the growth substrate, and the carbon source gas and hydrogen are continually supplied into the reaction chamber.
    Type: Grant
    Filed: May 17, 2017
    Date of Patent: November 24, 2020
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Jiang-Tao Wang, Bing-Yu Xia, Peng Liu, Yang Wei, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20170335448
    Abstract: A method for making carbon nanotube film includes providing a growth substrate having a first surface and a second surface opposite to the first surface. A catalyst layer is placed on the first surface. The growth substrate and the catalyst layer are placed in a reaction chamber. The carbon source gas and hydrogen are supplied into the reaction chamber at a growth temperature of a plurality of carbon nanotubes. An electric field is applied to the growth substrate, wherein an electric field direction of the electric field is from the first surface to the second surface. After the plurality of carbon nanotubes fly away from the growth substrate, the electric field is stopped applying to the growth substrate, and the carbon source gas and hydrogen are continually supplied into the reaction chamber.
    Type: Application
    Filed: May 17, 2017
    Publication date: November 23, 2017
    Inventors: JIANG-TAO WANG, BING-YU XIA, PENG LIU, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN