Abstract: This application provides an optical module, an electronic device, a communication system, and a related processing method. The optical module includes: a first processing unit, and a sampling unit, a sampled information storage unit, and a fault information storage unit that are separately electrically connected to the first processing unit. The sampling unit is configured to collect first sampled parameters, and store the first sampled parameters in the sampled information storage unit by using the first processing unit. The first processing unit is configured to: when identifying alarm information, read the first sampled parameters in the sampled information storage unit, determine, based on the first sampled parameters, fault type information corresponding to the alarm information, and store the fault type information in the fault information storage unit. The optical module does not need to transmit a large amount of sampled data to the electronic device.

Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.

Abstract: Disclosed is a histone acetyltransferase (HAT) inhibitor. Provided are a compound represented by the general formula I, a pharmaceutically acceptable salt, a stereoisomer, an enantiomer, a diastereoisomer, an atropisomer, a racemate, a polymorph, a solvate or an isotope-labeled compound (including deuterium substitution) thereof, a preparation method therefor, a pharmaceutical composition comprising same and use thereof in the treatment of various HAT-related diseases or conditions.

Abstract: A catalytic oxidation system for efficient conversion and removal of volatile organic compounds (VOCs) in a coal chemical industry is provided. The catalytic oxidation system includes a reactor and a first temperature control system, where the reactor is provided with a waste gas inlet and a waste gas outlet and is provided with a preheating zone, a reaction zone, and a heat recovery zone sequentially in a flow direction of a waste gas, and a catalyst is filled in the reaction zone; and the first temperature control system includes a first serpentine pipe buried in the catalyst and a first steam drum arranged outside the reactor, the first steam drum and the first serpentine pipe are connected through a pipeline to form a circulation line, and a temperature in the reaction zone is adjusted to 150° C. to 350° C. by controlling a pressure of the first steam drum.

Abstract: A computer-implemented method and a computer system for identifying persistent anomalies for failure prediction. The computer system receives a time series data stream. The computer system received a predetermined number N and a predetermined number M which is a fraction of N. The computer system segments the time series data stream into N consecutive sliding windows. The computer system performs supervised persistent anomaly detection to determine whether anomalies across the N consecutive sliding windows are persistent, by using a binary classification model. The computer system performs unsupervised persistent anomaly detection to determine whether the anomalies across the N consecutive sliding windows are persistent. The computer system combines results of the supervised persistent anomaly detection and results of the unsupervised persistent anomaly detection to determine persistent anomalies.

Abstract: A method of patterning a structure includes forming an alternating stack of first material layers and second material layers over a substrate, forming an etch mask material layer over the alternating stack, forming openings in an upper portion of the alternating stack by performing a first anisotropic etch process that transfers a pattern in the etch mask material layer through a first subset of layers within the alternating stack, anisotropically depositing a cladding material on the etch mask material layer to form a cladding material layer, ion implanting dopant atoms into the cladding material layer, and vertically extending the openings downward in the alternating stack by performing a second anisotropic etch process. The dopant atoms decrease an etch rate of the cladding material layer during the second anisotropic etch process.

Abstract: A method includes forming a first alternating stack of first insulating layers and first sacrificial material layers over a substrate, forming a first in-process inter-tier dielectric layer over the first alternating stack, forming a first memory opening through the first in-process inter-tier dielectric layer and the first alternating stack, forming a sacrificial memory opening fill structure in the first memory opening, doping an upper portion of the sacrificial memory opening fill structure with atoms of at least one dopant species, forming a second alternating stack of second insulating layers and second sacrificial material layers over the first alternating stack, forming a second memory opening through the second alternating stack by performing an anisotropic etch process, and removing the sacrificial memory opening fill structure.

Abstract: An under-screen camera is provided. A camera is positioned behind a see-through display screen and positioned to capture scene image data of objects in front of the display screen. The camera captures scene image data of a real-world scene including a user. The scene image data is processed to remove artifacts in the scene image data created by capturing the scene image data through the see-through display screen such as blur, noise, backscatter, wiring effect, and the like.

Abstract: The disclosure relates to a method, apparatus, readable medium, and electronic device for live stream interaction. The method includes: in accordance with displaying of a first control at a first target position of a live stream interface, obtaining a first duration during which a user watches the live stream interface; in accordance with a determination that the first duration is greater than or equal to a first predetermined duration threshold, switching the first control to a second control, and displaying the second control at a second target position of the live stream interface; and in response to a first operation command performed by the user on the second control, allocating a virtual resource to the user. In this way, interaction modes of a live stream room are enriched, and an activity level of the live stream room can be improved.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack and a memory opening fill structure located in the memory opening. A Group IV-containing material portion is formed by selective deposition on an end portion of the vertical semiconductor channel. Alternatively, a backside semiconductor cap structure can be formed directly on a bottom surface of the vertical semiconductor channel by selective or non-selective deposition of a semiconductor material.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack and a memory opening fill structure located in the memory opening. A Group IV-containing material portion is formed by selective deposition on an end portion of the vertical semiconductor channel. Alternatively, a backside semiconductor cap structure can be formed directly on a bottom surface of the vertical semiconductor channel by selective or non-selective deposition of a semiconductor material.

Abstract: The present invention relates to a heterocyclic amide inhibiting RIP1 kinase and the use thereof, and specifically, to a compound of formula I, its pharmaceutically acceptable salts, stereoisomers, enantiomers, diastereomers, atropisomers, optical isomers, racemates, polymorphs, solvates or isotopically labeled compounds, a pharmaceutical composition comprising the compound, and the pharmaceutical use thereof. The compound is particularly effective for treatment of diseases or disorders mediated by RIP1 kinase.

Abstract: The present invention relates to a heterocyclic compound for inhibiting SHP2 activity that is represented by formula I, a preparation method therefor and use thereof. The compound of the present invention is effective in treating a disease or disorder or condition mediated by SHP2.

Abstract: An air conditioning system, comprising an outdoor unit and an indoor heat exchange mechanism. The indoor heat exchange mechanism comprises an air conditioner indoor unit and a first heat exchange mechanism used for at least one among water cooling, water heating and space heating. The present air conditioning system integrates various functions into one, such as air-conditioning refrigeration, air-conditioning heating, producing household cold water, producing household hot water, and home heating by means of connecting indoor units for cooling and heating, a water cooling mechanism, a water heating mechanism and a device for floor heating located indoors to one outdoor unit. Moreover, the system directly utilizes high-temperature refrigerant to heat water for floor heating.

Abstract: The disclosure relates to a method, apparatus, readable medium, and electronic device for live stream interaction. The method includes: in accordance with displaying of a first control at a first target position of a live stream interface, obtaining a first duration during which a user watches the live stream interface; in accordance with a determination that the first duration is greater than or equal to a first predetermined duration threshold, switching the first control to a second control, and displaying the second control at a second target position of the live stream interface; and in response to a first operation command performed by the user on the second control, allocating a virtual resource to the user. In this way, interaction modes of a live stream room are enriched, and an activity level of the live stream room can be improved.

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a vertical stack of memory elements and a vertical semiconductor channel, and a vertical stack of insulating spacers located at levels of the insulating layers between the memory opening fill structure and the insulating layers. The insulating spacers have different thicknesses such that the thicknesses of the insulating spacers increase with an upward vertical distance from a horizontal plane including a top surface of the substrate.

Abstract: A method of forming a memory device includes forming an alternating stack of insulating layers including a first insulating material and sacrificial material layers including a first sacrificial material over a substrate, forming a memory opening through the alternating stack, performing a first selective material deposition process that selectively grows a second sacrificial material from physically exposed surfaces of the sacrificial material layers to form a vertical stack of sacrificial material portions; forming a memory opening fill structure in the memory opening, where the memory opening fill structure includes a vertical stack of memory elements and a vertical semiconductor channel, and replacing a combination of the vertical stack of sacrificial material portions and the sacrificial material layers with electrically conductive layers.

Abstract: A etch stop structure is formed a sacrificial memory opening fill structure formed within a first-tier memory opening vertically extending through a first-tier alternating stack of first insulating layers and first spacer material layers. The etch stop structure may include a conductive etch stop plate that is formed over a sacrificial memory opening fill material portion inside the first-tier memory opening, or may include a semiconductor plug which is selectively grown from sidewalls of an etch stop semiconductor material layer that is formed over the first-tier alternating stack. A second-tier alternating stack of second insulating layers and second spacer material layers is formed over the first-tier alternating stack and the etch stop structure.

Abstract: A etch stop structure is formed a sacrificial memory opening fill structure formed within a first-tier memory opening vertically extending through a first-tier alternating stack of first insulating layers and first spacer material layers. The etch stop structure may include a conductive etch stop plate that is formed over a sacrificial memory opening fill material portion inside the first-tier memory opening, or may include a semiconductor plug which is selectively grown from sidewalls of an etch stop semiconductor material layer that is formed over the first-tier alternating stack. A second-tier alternating stack of second insulating layers and second spacer material layers is formed over the first-tier alternating stack and the etch stop structure.

Abstract: Embodiments provide a fault locating method for an optical network and a related device to reduce network complexity of fault locating and improve accuracy and efficiency of fault locating in an optical network. The method provides a network management device obtains a first sample set from a first optical network device, where the first sample set includes a plurality of optical powers obtained from the first optical network device sequentially sampling a first optical signal for a plurality of times by the first optical network device in a first fault locating time period, and at least one optical power included in the first sample set is less than or equal to an optical power threshold. The network management device determines a fault type in an optical network based on a change trend of the plurality of optical powers.