Abstract: The present disclosure provides compounds represented by Formula I-A: A1-L1-B1??I-A and the pharmaceutically acceptable salts, hydrates, and solvates thereof, wherein A1, B1, and L1 are as defined as set forth in the specification. The present disclosure also provides compounds of Formula I-A for use to treat a condition or disorder responsive to degradation of MDM2 protein such as cancer.

Abstract: A neural repair composition, and a preparation method and use thereof are provided. The neural repair composition includes the following components in parts by weight: 0.1 part to 10 parts of curcumin or a turmeric powder and 4 parts to 460 parts of an Acer truncatum bunge seed oil. Through the synergistic interaction between Acer truncatum bunge seed oil and curcumin, the composition demonstrates excellent anti-aging and neural repair efficacy, while exhibiting mild action and non-irritating properties to the human body. The composition shows significant effects in preventing and treating neurodegenerative diseases, particularly in alleviating depression and enhancing memory.

Abstract: A polymer composition contains a polyester graft copolymer and a polyester homopolymer. The molecular weight of the polyester graft copolymer is higher than the molecular weight of the polyester homopolymer, and the polyester graft copolymer is represented by the following formula: In the formula, x, y1, y2 and z each independently represents the degree of polymerization, PM represents a polyester chain and the degree of polymerization of the polyester chain is p, x and p are each independently a number greater than zero, y1, y2 and z are each independently zero or a number greater than zero. The polyester homopolymer and the polyester chains in the polyester graft copolymer are derived from the same monomer(s) for polyester.

Abstract: A etch stop structure is formed a sacrificial memory opening fill structure formed within a first-tier memory opening vertically extending through a first-tier alternating stack of first insulating layers and first spacer material layers. The etch stop structure may include a conductive etch stop plate that is formed over a sacrificial memory opening fill material portion inside the first-tier memory opening, or may include a semiconductor plug which is selectively grown from sidewalls of an etch stop semiconductor material layer that is formed over the first-tier alternating stack. A second-tier alternating stack of second insulating layers and second spacer material layers is formed over the first-tier alternating stack and the etch stop structure.

Abstract: A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack and a memory opening fill structure located in the memory opening. A Group IV-containing material portion is formed by selective deposition on an end portion of the vertical semiconductor channel. Alternatively, a backside semiconductor cap structure can be formed directly on a bottom surface of the vertical semiconductor channel by selective or non-selective deposition of a semiconductor material.

Abstract: A finger gesture recognition system is provided. The finger gesture recognition system includes one or more audio sensors and one or more optic sensors. The finger gesture recognition system captures, using the one or more audio sensors, audio signal data of a finger gesture being made by a user, and captures, using the one or more optic sensors, optic signal data of the finger gesture. The finger gesture recognition system recognizes the finger gesture based on the audio signal data and the optic signal data and communicates finger gesture data of the recognized finger gesture to an Augmented Reality/Combined Reality/Virtual Reality (XR) application.

Abstract: A pose tracking system is provided. The pose tracking system includes an EMF tracking system having a user-worn head-mounted EMF source and one or more user-worn EMF tracking sensors attached to the wrists of the user. The EMF source is associated with a VIO tracking system such as AR glasses or the like. The pose tracking system determines a pose of the user's head and a ground plane using the VIO tracking system and a pose of the user's hands using the EMF tracking system to determine a full-body pose for the user. Metal interference with the EMF tracking system is minimized using an IMU mounted with the EMF tracking sensors. Long term drift in the IMU and the VIO tracking system are minimized using the EMF tracking system.

Abstract: A method of patterning a structure includes forming an alternating stack of first material layers and second material layers over a substrate, forming an etch mask material layer over the alternating stack, forming openings in an upper portion of the alternating stack by performing a first anisotropic etch process that transfers a pattern in the etch mask material layer through a first subset of layers within the alternating stack, anisotropically depositing a cladding material on the etch mask material layer to form a cladding material layer, ion implanting dopant atoms into the cladding material layer, and vertically extending the openings downward in the alternating stack by performing a second anisotropic etch process. The dopant atoms decrease an etch rate of the cladding material layer during the second anisotropic etch process.

Abstract: A method of forming a memory device includes forming an alternating stack of insulating layers including a first insulating material and sacrificial material layers including a first sacrificial material over a substrate, forming a memory opening through the alternating stack, performing a first selective material deposition process that selectively grows a second sacrificial material from physically exposed surfaces of the sacrificial material layers to form a vertical stack of sacrificial material portions; forming a memory opening fill structure in the memory opening, where the memory opening fill structure includes a vertical stack of memory elements and a vertical semiconductor channel, and replacing a combination of the vertical stack of sacrificial material portions and the sacrificial material layers with electrically conductive layers.

Abstract: A finger gesture recognition system is provided. The finger gesture recognition system includes one or more audio sensors and one or more optic sensors. The finger gesture recognition system captures, using the one or more audio sensors, audio signal data of a finger gesture being made by a user, and captures, using the one or more optic sensors, optic signal data of the finger gesture. The finger gesture recognition system recognizes the finger gesture based on the audio signal data and the optic signal data and communicates finger gesture data of the recognized finger gesture to an Augmented Reality/Combined Reality/Virtual Reality (XR) application.

Abstract: A first-tier alternating stack of first-tier insulating layers and first-tier sacrificial material layers is formed over a substrate. A first-tier memory opening is formed, and is filled with a first-tier sacrificial memory opening fill structure. A second-tier alternating stack of second-tier insulating layers and second-tier sacrificial material layers is formed. An etch mask layer is formed, and a second-tier memory opening is formed through the second-tier alternating stack. An etch mask removal process is performed which collaterally removes a top portion of the first-tier sacrificial memory opening fill structure. A sacrificial pillar structure is formed by performing a selective material deposition process. An inter-tier memory opening is formed by removing the first-tier sacrificial memory opening fill structure and at least a central portion of the sacrificial pillar structure.

Abstract: The present invention relates to a compound for treating thrombotic diseases. Specifically, the present invention provides a compound represented by formula I, or a pharmaceutically acceptable salt, or an enantiomer, or a diastereoisomer, or an atropisomer, or a racemate, or a polymorph, or a solvate, or an isotopically labeled derivative thereof. The compound disclosed in the present invention can be specifically combined with SH3 domain protein of Src kinase and then interfere the combination of integrin ?IIb?3 and Src kinase, so that outside-to-inside signal transduction is selectively inhibited and inside-to-outside signal transduction is not influenced; thus, while resisting thrombus, the compound of the present invention does not affect the normal physiological hemostatic function, prevents the occurrence of hemorrhagic side effect, and can be used as a new generation of effective medicine for preventing and treating thrombosis-related cardiovascular and cerebrovascular diseases.

Abstract: Embodiments of this application provide an optical path dirt identification method and apparatus. The method includes: obtaining first data, where the first data is performance data that is of a port of an optical path and that is collected in a cycle; and determine, based on the first data and a dirt identification model, whether dirt occurs on the optical path, where the dirt identification model is determined by using historical performance data of the port of the first optical path. It may be determined, by using the performance data of the port of the optical path and the dirt identification model, whether degradation of the optical path is caused by dirt on an end face of the optical path.

Abstract: A method of forming a structure includes forming an alternating stack of first material layers and second material layers over a substrate, forming a first etch mask material layer, forming a first cladding liner, and forming a via opening through the alternating stack by performing an anisotropic etch process that employs a combination of at least the first cladding liner and the first etch mask material layer as a composite etch mask structure.

Abstract: A two-stage approach for learning and generating an expressive text-to-motion animation from partially annotated datasets (T2M-X). In an example implementation, T2M-X builds a unified motion dataset based on partially annotated datasets. In the first stage, T2M-X uses the unified motion dataset to train three vector-quantized variational autoencoders (VQ-VAE) for body, hand, and face, respectively, and generate high-quality motion outputs. In the second stage, T2M-X uses the high-quality motion outputs to train a multi-indexing generative pre-trained transformer (GPT) model that includes motion consistency loss and sequence length consistency for learning and then generating coordinated and expressive animations.

Abstract: A device structure includes a layer stack that includes a first alternating stack of first insulating layers and first electrically conductive layers which overlies a base material layer, and an opening fill structure vertically extending through each layer within the layer stack and laterally enclosed by or contacted by the first alternating stack. The opening fill structure includes a first portion having a first variable width that increases linearly with a vertical distance from the base material layer, a second portion that overlies and is adjoined to the first portion and having a second variable width that decreases non-linearly with the vertical distance from the base material layer and laterally bounded by a tapered annular surface segment having a convex vertical profile, and a third portion that overlies the second portion and having a third variable width that increases linearly with the vertical distance from the base material layer.

Abstract: This application provides an optical module, an electronic device, a communication system, and a related processing method. The optical module includes: a first processing unit, and a sampling unit, a sampled information storage unit, and a fault information storage unit that are separately electrically connected to the first processing unit. The sampling unit is configured to collect first sampled parameters, and store the first sampled parameters in the sampled information storage unit by using the first processing unit. The first processing unit is configured to: when identifying alarm information, read the first sampled parameters in the sampled information storage unit, determine, based on the first sampled parameters, fault type information corresponding to the alarm information, and store the fault type information in the fault information storage unit. The optical module does not need to transmit a large amount of sampled data to the electronic device.

Abstract: Disclosed is a histone acetyltransferase (HAT) inhibitor. Provided are a compound represented by the general formula I, a pharmaceutically acceptable salt, a stereoisomer, an enantiomer, a diastereoisomer, an atropisomer, a racemate, a polymorph, a solvate or an isotope-labeled compound (including deuterium substitution) thereof, a preparation method therefor, a pharmaceutical composition comprising same and use thereof in the treatment of various HAT-related diseases or conditions.