Abstract: Disclosed are a heating chamber and a reaction chamber. The heating chamber includes a substrate conveyance channel, configured for conveyance of the substrate. The substrate conveyance channel is formed with a substrate placing position where the substrate is picked or placed. A gas transport and growth chamber is arranged in parallel with the substrate conveyance channel, and the gas transport and growth chamber is formed with an epitaxial growth position for the epitaxial growth of the substrate. A transfer port of the substrate conveyance channel and a gas supply port of the gas transport and growth chamber are located on a same side of the heating chamber. As described above, the conveying apparatus no longer passes through a downstream space of the reaction chamber where a dust-like by-product is produced, so that a surface defect of the substrate caused by particles in the downstream space may be greatly reduced.

Abstract: A reaction chamber and a reaction device are disclosed. The reaction chamber may include a hollow heating member, a rotating platform, a protection plate assembly and a separator. The rotating platform is rotatably provided in an inner cavity of the hollow heating member. The rotating platform is used for bearing a wafer. The protection plate assembly is provided on two sides of the rotating platform. The separator is erected on the protection plate assembly. The separator is matched with the protection plate assembly.

Abstract: An epitaxial reaction device includes: a conveying apparatus and at least one reaction apparatus. The reaction apparatus includes a high-temperature reaction chamber, a gas supply module, and a gas extraction module. The high-temperature reaction chamber is used for providing an environmental condition required during wafer processing. The gas supply module and the gas extraction module are oppositely provided in the high-temperature reaction chamber. The gas supply module is used for supplying reaction gas to the high-temperature reaction chamber, and the gas extraction module is used for extracting residual gas. The conveying apparatus is provided on the high-temperature reaction chamber and located on a same side as the gas supply module. The conveying apparatus is used for taking out and placing the wafer.